Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots (1998)
Pusep, Yuri A 
; Zanelatto, G.; Silva, S. W.; Galzerani, J. C.; González-Borrero, Pedro Pablo; Toropov, A. I.; Basmaji, Pierre
Fonte: Physical Review B. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots. Physical Review B, v. 58, n. 4, p. R1770-R1773, 1998Tradução . . Disponível em: https://doi.org/10.1103/physrevb.58.r1770. Acesso em: 06 nov. 2024.APA
Pusep, Y. A., Zanelatto, G., Silva, S. W., Galzerani, J. C., González-Borrero, P. P., Toropov, A. I., & Basmaji, P. (1998). Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots. Physical Review B, 58( 4), R1770-R1773. doi:10.1103/physrevb.58.r1770NLM
Pusep YA, Zanelatto G, Silva SW, Galzerani JC, González-Borrero PP, Toropov AI, Basmaji P. Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots [Internet]. Physical Review B. 1998 ; 58( 4): R1770-R1773.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1103/physrevb.58.r1770Vancouver
Pusep YA, Zanelatto G, Silva SW, Galzerani JC, González-Borrero PP, Toropov AI, Basmaji P. Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots [Internet]. Physical Review B. 1998 ; 58( 4): R1770-R1773.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1103/physrevb.58.r1770
