Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE (1998)
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
PETITPREZ, Emmanuel et al. Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. 1998, Anais.. São Paulo: Sociedade Brasileira de Física, 1998. . Acesso em: 20 out. 2024.APA
Petitprez, E., González-Borrero, P. P., Marega Junior, E., Basmaji, P., Mazel, A., Dorignac, D., & Fourmeaux, R. (1998). Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. In Resumos. São Paulo: Sociedade Brasileira de Física.NLM
Petitprez E, González-Borrero PP, Marega Junior E, Basmaji P, Mazel A, Dorignac D, Fourmeaux R. Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. Resumos. 1998 ;[citado 2024 out. 20 ]Vancouver
Petitprez E, González-Borrero PP, Marega Junior E, Basmaji P, Mazel A, Dorignac D, Fourmeaux R. Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. Resumos. 1998 ;[citado 2024 out. 20 ]