ReP USP - Resultado da busca

Artigo de periodico
Optical absorption and electronic band structure first-principles calculations of 'alfa´-glycine crystals (2008)
Flores, M Z S; Freire, V N; Santos, R P dos; Farias, G A; Caetano, E W S; Oliveira, M C F de; Fernandez, J R L; Scolfaro, Luisa Maria Ribeiro; Bezerra, M J B; Oliveira, T M; Bezerra, G A; Cavada, B S; Alves, H W Leite
Source: Physical Review B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
FLORES, M Z S et al. Optical absorption and electronic band structure first-principles calculations of 'alfa´-glycine crystals. Physical Review B, v. 77, n. 11 p. 115104/1-115104/7, 2008Tradução . . Disponível em: https://doi.org/10.1103/physrevb.77.115104. Acesso em: 04 out. 2024.
APA
Flores, M. Z. S., Freire, V. N., Santos, R. P. dos, Farias, G. A., Caetano, E. W. S., Oliveira, M. C. F. de, et al. (2008). Optical absorption and electronic band structure first-principles calculations of 'alfa´-glycine crystals. Physical Review B, 77( 11 p. 115104/1-115104/7). doi:10.1103/physrevb.77.115104
NLM
Flores MZS, Freire VN, Santos RP dos, Farias GA, Caetano EWS, Oliveira MCF de, Fernandez JRL, Scolfaro LMR, Bezerra MJB, Oliveira TM, Bezerra GA, Cavada BS, Alves HWL. Optical absorption and electronic band structure first-principles calculations of 'alfa´-glycine crystals [Internet]. Physical Review B. 2008 ; 77( 11 p. 115104/1-115104/7):[citado 2024 out. 04 ] Available from: https://doi.org/10.1103/physrevb.77.115104
Vancouver
Flores MZS, Freire VN, Santos RP dos, Farias GA, Caetano EWS, Oliveira MCF de, Fernandez JRL, Scolfaro LMR, Bezerra MJB, Oliveira TM, Bezerra GA, Cavada BS, Alves HWL. Optical absorption and electronic band structure first-principles calculations of 'alfa´-glycine crystals [Internet]. Physical Review B. 2008 ; 77( 11 p. 115104/1-115104/7):[citado 2024 out. 04 ] Available from: https://doi.org/10.1103/physrevb.77.115104
Trabalho de evento-resumo
Absorção ótica, XPS e cálculos de primeiros princípios em cristais de `alfa´-glicina (2007)
Flores, M Z S; Caetano, E W S; Freire, V N; Bezerra, G A; Oliveira, T M; Cavada, B S; Oliveira, M C F de; Fernandez, J R L; Scolfaro, Luisa Maria Ribeiro; Alves, H W Leite; Schreiner, W H
Source: Resumo. Conference titles: Encontro Nacional de Física da Materia Condensada. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, ESPECTROSCOPIA DE RAIO X
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ABNT
FLORES, M Z S et al. Absorção ótica, XPS e cálculos de primeiros princípios em cristais de `alfa´-glicina. 2007, Anais.. São Paulo: SBF, 2007. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0862-1.pdf. Acesso em: 04 out. 2024.
APA
Flores, M. Z. S., Caetano, E. W. S., Freire, V. N., Bezerra, G. A., Oliveira, T. M., Cavada, B. S., et al. (2007). Absorção ótica, XPS e cálculos de primeiros princípios em cristais de `alfa´-glicina. In Resumo. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0862-1.pdf
NLM
Flores MZS, Caetano EWS, Freire VN, Bezerra GA, Oliveira TM, Cavada BS, Oliveira MCF de, Fernandez JRL, Scolfaro LMR, Alves HWL, Schreiner WH. Absorção ótica, XPS e cálculos de primeiros princípios em cristais de `alfa´-glicina [Internet]. Resumo. 2007 ;[citado 2024 out. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0862-1.pdf
Vancouver
Flores MZS, Caetano EWS, Freire VN, Bezerra GA, Oliveira TM, Cavada BS, Oliveira MCF de, Fernandez JRL, Scolfaro LMR, Alves HWL, Schreiner WH. Absorção ótica, XPS e cálculos de primeiros princípios em cristais de `alfa´-glicina [Internet]. Resumo. 2007 ;[citado 2024 out. 04 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0862-1.pdf
Artigo de periodico
Surface properties of CdS nanoparticles (2006)
Favero, Paulo Roberto; Souza-Parise, M de; Fernandez, J R L; Miotto, R; Ferraz, A. C.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: SEMICONDUTORES, NANOPARTÍCULAS
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ABNT
FAVERO, Paulo Roberto et al. Surface properties of CdS nanoparticles. Brazilian Journal of Physics, v. 36, n. 3B, p. 1032-1034, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000600062. Acesso em: 04 out. 2024.
APA
Favero, P. R., Souza-Parise, M. de, Fernandez, J. R. L., Miotto, R., & Ferraz, A. C. (2006). Surface properties of CdS nanoparticles. Brazilian Journal of Physics, 36( 3B), 1032-1034. doi:10.1590/s0103-97332006000600062
NLM
Favero PR, Souza-Parise M de, Fernandez JRL, Miotto R, Ferraz AC. Surface properties of CdS nanoparticles [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): 1032-1034.[citado 2024 out. 04 ] Available from: https://doi.org/10.1590/s0103-97332006000600062
Vancouver
Favero PR, Souza-Parise M de, Fernandez JRL, Miotto R, Ferraz AC. Surface properties of CdS nanoparticles [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): 1032-1034.[citado 2024 out. 04 ] Available from: https://doi.org/10.1590/s0103-97332006000600062
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A ; Silva, M T O; Fernandez, J R L; Chitta, V A; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 04 out. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 out. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 out. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Trabalho de evento-resumo
Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells (2001)
Noriega, Odille Cue; Tabata, Americo; Chitta, V A; Sotomayor, N M; Fernandez, J R L; Leite, J. R.; Meneses, E A; Ribeiro, E; As, D J; Schikora, D; Lischka, K
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, SEMICONDUTORES
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ABNT
NORIEGA, Odille Cue et al. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 04 out. 2024.
APA
Noriega, O. C., Tabata, A., Chitta, V. A., Sotomayor, N. M., Fernandez, J. R. L., Leite, J. R., et al. (2001). Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. In Resumos. São Paulo: SBF.
NLM
Noriega OC, Tabata A, Chitta VA, Sotomayor NM, Fernandez JRL, Leite JR, Meneses EA, Ribeiro E, As DJ, Schikora D, Lischka K. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. Resumos. 2001 ;[citado 2024 out. 04 ]
Vancouver
Noriega OC, Tabata A, Chitta VA, Sotomayor NM, Fernandez JRL, Leite JR, Meneses EA, Ribeiro E, As DJ, Schikora D, Lischka K. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. Resumos. 2001 ;[citado 2024 out. 04 ]
Artigo de periodico
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)
Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS
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ABNT
FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)01473-7. Acesso em: 04 out. 2024.
APA
Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
NLM
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 out. 04 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Vancouver
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 out. 04 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Artigo de periodico
MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties (2001)
As, D J; Frey, T; Barttls, M; Lischka, K; Goldhahn, R; Shokhovets, S; Tabata, A; Fernandez, J R L; Leite, J. R.
Source: Journal of Crstal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MAGNETISMO, SEMICONDUTORES, MATÉRIA CONDENSADA, ÓPTICA (PROPRIEDADES)
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ABNT
AS, D J et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, v. 230, n. 3-4, p. 421-425, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf. Acesso em: 04 out. 2024.
APA
As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
NLM
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2024 out. 04 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Vancouver
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2024 out. 04 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Artigo de periodico
Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures (2001)
Frey, T; As, D J; Bartels, M; Pawlis, A; Tabata, A; Fernandez, J R L; Silva, M T O; Leite, J. R.; Haug, C; Brenn, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR
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ABNT
FREY, T et al. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, v. 89, n. 5, p. 2631-2634, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1345858. Acesso em: 04 out. 2024.
APA
Frey, T., As, D. J., Bartels, M., Pawlis, A., Tabata, A., Fernandez, J. R. L., et al. (2001). Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, 89( 5), 2631-2634. doi:10.1063/1.1345858
NLM
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2024 out. 04 ] Available from: https://doi.org/10.1063/1.1345858
Vancouver
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2024 out. 04 ] Available from: https://doi.org/10.1063/1.1345858
Trabalho de evento
Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy (2000)
Fernandez, J R L; Tabata, A; Chitta, V A; As, D J; Frey, T; Noriega, O C; Silva, M T O; Abramof, E; Schikora, D; Lischka, K; Leite, J. R.
Source: Proceedings. Conference titles: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 04 out. 2024.
APA
Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 out. 04 ]
Vancouver
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 out. 04 ]

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