Subjects: SEMICONDUTORES, RAIOS X
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DOMAGALA, Jaroslaw Z. et al. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf. Acesso em: 02 set. 2024. , 2016APA
Domagala, J. Z., Sarzyński, M., Maździarz, M., Dlużewski, P., Leszczyński, M., & Morelhão, S. L. (2016). Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdfNLM
Domagala JZ, Sarzyński M, Maździarz M, Dlużewski P, Leszczyński M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. 2016 ;[citado 2024 set. 02 ] Available from: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdfVancouver
Domagala JZ, Sarzyński M, Maździarz M, Dlużewski P, Leszczyński M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. 2016 ;[citado 2024 set. 02 ] Available from: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf
