"Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon (1999)
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FÍSICA
ABNT
CAPAZ, R. B. et al. "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon. Brazilian Journal of Physics, v. 29, n. 4, p. 611-615, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400002. Acesso em: 30 abr. 2026.APA
Capaz, R. B., Assali, L. V. C., Kimerling, L. C., Cho, K., & Joannopoulos, J. D. (1999). "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon. Brazilian Journal of Physics, 29( 4), 611-615. doi:10.1590/s0103-97331999000400002NLM
Capaz RB, Assali LVC, Kimerling LC, Cho K, Joannopoulos JD. "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 611-615.[citado 2026 abr. 30 ] Available from: https://doi.org/10.1590/s0103-97331999000400002Vancouver
Capaz RB, Assali LVC, Kimerling LC, Cho K, Joannopoulos JD. "Ab Initio" studies of hydrogen=enhanced oxygen diffusion in silicon [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 611-615.[citado 2026 abr. 30 ] Available from: https://doi.org/10.1590/s0103-97331999000400002
