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Artigo de periodico
Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method (2018)
Campos, Tiago; Faria Junior, Paulo E.; Gmitra, Martin; Sipahi, Guilherme Matos ; Fabian, Jaroslav
Source: Physical Review B. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, SPINTRÔNICA, MATERIAIS NANOESTRUTURADOS
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ABNT
CAMPOS, Tiago et al. Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method. Physical Review B, v. 97, n. 24, p. 245402-1-245402-18, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.97.245402. Acesso em: 03 nov. 2024.
APA
Campos, T., Faria Junior, P. E., Gmitra, M., Sipahi, G. M., & Fabian, J. (2018). Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method. Physical Review B, 97( 24), 245402-1-245402-18. doi:10.1103/PhysRevB.97.245402
NLM
Campos T, Faria Junior PE, Gmitra M, Sipahi GM, Fabian J. Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method [Internet]. Physical Review B. 2018 ; 97( 24): 245402-1-245402-18.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.97.245402
Vancouver
Campos T, Faria Junior PE, Gmitra M, Sipahi GM, Fabian J. Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method [Internet]. Physical Review B. 2018 ; 97( 24): 245402-1-245402-18.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.97.245402
Artigo de periodico
Realistic multiband k · p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase (2016)
Faria Junior, Paulo E.; Campos, Tiago; Bastos, Carlos M. O.; Gmitra, Martin; Fabian, Jaroslav; Sipahi, Guilherme Matos
Source: Physical Review B. Unidade: IFSC
Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, SPIN, SISTEMAS HAMILTONIANOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FARIA JUNIOR, Paulo E. et al. Realistic multiband k · p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase. Physical Review B, v. 93, n. 23, p. 235204-1-235204-14, 2016Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.93.235204. Acesso em: 03 nov. 2024.
APA
Faria Junior, P. E., Campos, T., Bastos, C. M. O., Gmitra, M., Fabian, J., & Sipahi, G. M. (2016). Realistic multiband k · p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase. Physical Review B, 93( 23), 235204-1-235204-14. doi:10.1103/PhysRevB.93.235204
NLM
Faria Junior PE, Campos T, Bastos CMO, Gmitra M, Fabian J, Sipahi GM. Realistic multiband k · p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase [Internet]. Physical Review B. 2016 ; 93( 23): 235204-1-235204-14.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.93.235204
Vancouver
Faria Junior PE, Campos T, Bastos CMO, Gmitra M, Fabian J, Sipahi GM. Realistic multiband k · p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase [Internet]. Physical Review B. 2016 ; 93( 23): 235204-1-235204-14.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.93.235204
Trabalho de evento-resumo periodico
Effective multiband Hamiltonian for InAs in wurtzite phase (2016)
Faria Junior, Paulo E.; Campos, Tiago; Bastos, Carlos M. O.; Sipahi, Guilherme Matos ; Gmitra, Martin; Fabian, Jaroslav
Source: Bulletin of the American Physical Society. Conference titles: APS March Meeting. Unidade: IFSC
Subjects: SPIN, NANOTECNOLOGIA
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ABNT
FARIA JUNIOR, Paulo E. et al. Effective multiband Hamiltonian for InAs in wurtzite phase. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: http://meetings.aps.org/link/BAPS.2016.MAR.G1.60. Acesso em: 03 nov. 2024. , 2016
APA
Faria Junior, P. E., Campos, T., Bastos, C. M. O., Sipahi, G. M., Gmitra, M., & Fabian, J. (2016). Effective multiband Hamiltonian for InAs in wurtzite phase. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de http://meetings.aps.org/link/BAPS.2016.MAR.G1.60
NLM
Faria Junior PE, Campos T, Bastos CMO, Sipahi GM, Gmitra M, Fabian J. Effective multiband Hamiltonian for InAs in wurtzite phase [Internet]. Bulletin of the American Physical Society. 2016 ; 61( 2):[citado 2024 nov. 03 ] Available from: http://meetings.aps.org/link/BAPS.2016.MAR.G1.60
Vancouver
Faria Junior PE, Campos T, Bastos CMO, Sipahi GM, Gmitra M, Fabian J. Effective multiband Hamiltonian for InAs in wurtzite phase [Internet]. Bulletin of the American Physical Society. 2016 ; 61( 2):[citado 2024 nov. 03 ] Available from: http://meetings.aps.org/link/BAPS.2016.MAR.G1.60
Artigo de periodico
Stability and accuracy control of k . p parameters (2016)
Bastos, Carlos M. O.; Sabino, Fernando P.; Faria Junior, Paulo E.; Campos, Tiago; Silva, Juarez Lopes Ferreira da ; Sipahi, Guilherme Matos
Source: Semiconductor Science and Technology. Unidades: IQSC, IFSC
Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, SPIN, SISTEMAS HAMILTONIANOS
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ABNT
BASTOS, Carlos M. O. et al. Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, v. 31, n. 10, p. 105002-1-105002-10, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/10/105002. Acesso em: 03 nov. 2024.
APA
Bastos, C. M. O., Sabino, F. P., Faria Junior, P. E., Campos, T., Silva, J. L. F. da, & Sipahi, G. M. (2016). Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, 31( 10), 105002-1-105002-10. doi:10.1088/0268-1242/31/10/105002
NLM
Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002
Vancouver
Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002

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