Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model (1997)
Bellodi, Marcelo; Martino, João Antonio 
; Flandre, Denis
Assunto: MICROELETRÔNICA
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BELLODI, Marcelo e MARTINO, João Antonio e FLANDRE, Denis. Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model. 1997Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/d4f83012-acb5-4d09-bd02-6a898faeee21/3210408.pdf. Acesso em: 28 abr. 2026.APA
Bellodi, M., Martino, J. A., & Flandre, D. (1997). Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model. Recuperado de https://repositorio.usp.br/directbitstream/d4f83012-acb5-4d09-bd02-6a898faeee21/3210408.pdfNLM
Bellodi M, Martino JA, Flandre D. Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model [Internet]. 1997 ;[citado 2026 abr. 28 ] Available from: https://repositorio.usp.br/directbitstream/d4f83012-acb5-4d09-bd02-6a898faeee21/3210408.pdfVancouver
Bellodi M, Martino JA, Flandre D. Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model [Internet]. 1997 ;[citado 2026 abr. 28 ] Available from: https://repositorio.usp.br/directbitstream/d4f83012-acb5-4d09-bd02-6a898faeee21/3210408.pdf
