Doping by difussion and implantation of V, Cr, Mn and Fe ions in uncoloured beryl crystals (2003)
Source: Final Programme and Abstracts. Conference titles: International Conference on Radiation Effects in Insulators. Unidade: IF
Subjects: DOSIMETRIA, DOSIMETRIA TERMOLUMINESCENTE
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MITTANI, Juan Carlos Ramirez et al. Doping by difussion and implantation of V, Cr, Mn and Fe ions in uncoloured beryl crystals. 2003, Anais.. Porto Alegre: Instituto de Física, Universidade Federal do Rio Grande do Sul, 2003. . Acesso em: 21 out. 2025.APA
Mittani, J. C. R., Watanabe, S., Matsuoka, M., Baptista, D. L., & Zawislak, F. C. (2003). Doping by difussion and implantation of V, Cr, Mn and Fe ions in uncoloured beryl crystals. In Final Programme and Abstracts. Porto Alegre: Instituto de Física, Universidade Federal do Rio Grande do Sul.NLM
Mittani JCR, Watanabe S, Matsuoka M, Baptista DL, Zawislak FC. Doping by difussion and implantation of V, Cr, Mn and Fe ions in uncoloured beryl crystals. Final Programme and Abstracts. 2003 ;[citado 2025 out. 21 ]Vancouver
Mittani JCR, Watanabe S, Matsuoka M, Baptista DL, Zawislak FC. Doping by difussion and implantation of V, Cr, Mn and Fe ions in uncoloured beryl crystals. Final Programme and Abstracts. 2003 ;[citado 2025 out. 21 ]
