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Filtros : "Abramog, E" Limpar

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  • Artigo de periodico

    Two-dimensional intensity profiles of effective satellites (2002)

    Morelhão, Sérgio Luiz; Avanci, L H; Quivy, A. A.; Abramog, E

    Source: Journal of Applied Crystallography. Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, CRISTALOGRAFIA FÍSICA

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    • ABNT

      MORELHÃO, Sérgio Luiz et al. Two-dimensional intensity profiles of effective satellites. Journal of Applied Crystallography, v. 35, p. 69-74, 2002Tradução . . Disponível em: https://doi.org/10.1107/s0021889801018921. Acesso em: 07 nov. 2024.

    • APA

      Morelhão, S. L., Avanci, L. H., Quivy, A. A., & Abramog, E. (2002). Two-dimensional intensity profiles of effective satellites. Journal of Applied Crystallography, 35, 69-74. doi:10.1107/s0021889801018921

    • NLM

      Morelhão SL, Avanci LH, Quivy AA, Abramog E. Two-dimensional intensity profiles of effective satellites [Internet]. Journal of Applied Crystallography. 2002 ; 35 69-74.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1107/s0021889801018921

    • Vancouver

      Morelhão SL, Avanci LH, Quivy AA, Abramog E. Two-dimensional intensity profiles of effective satellites [Internet]. Journal of Applied Crystallography. 2002 ; 35 69-74.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1107/s0021889801018921

  • Artigo de periodico

    Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)

    Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K

    Source: Journal of Crystal Growth. Unidade: IF

    Subjects: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS

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    • ABNT

      FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)01473-7. Acesso em: 07 nov. 2024.

    • APA

      Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7

    • NLM

      Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7

    • Vancouver

      Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
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