Fonte: Semiconductor Science and Technology. Unidade: FZEA
Assuntos: FOTOLUMINESCÊNCIA, EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
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PRANDO, G. A. et al. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, p. 1-7, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aad02e. Acesso em: 07 ago. 2024.APA
Prando, G. A., Gordo, V. O., Puustinen, J., Hilska, J., Alghamdi, H. M., Som, G., et al. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33( 8), 1-7. doi:10.1088/1361-6641/aad02eNLM
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1088/1361-6641/aad02eVancouver
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
