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Filtros : "Universidade Federal de Mato Grosso do Sul (UFMS)" "JASINEVICIUS, RENATO GOULART" "EESC" Removidos: "FORP-805" "2000" Limpar

Filtros

Artigo de periodico
Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Pizani, Paulo Sérgio; Duduch, Jaime Gilberto; Santos, Francisco José
Source: Materials Research. Unidade: EESC
Subjects: SEMICONDUTORES, MUDANÇA DE FASE, DUCTILIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, v. 8, n. 3, p. 261-268, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1516-14392005000300007. Acesso em: 14 nov. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Pizani, P. S., Duduch, J. G., & Santos, F. J. (2005). Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, 8( 3), 261-268. doi:10.1590/s1516-14392005000300007
NLM
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Vancouver
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Artigo de periodico
Multiple phase silicon in submicrometer chips removed by diamond turning (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio; Lanciotti Junior, Francesco; Santos, Francisco José dos
Source: Journal of the Brazilian Society of Mechanical Sciences and Engineering. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, v. 27, n. 4, p. 440-448, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782005000400013. Acesso em: 14 nov. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., Pizani, P. S., Lanciotti Junior, F., & Santos, F. J. dos. (2005). Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, 27( 4), 440-448. doi:10.1590/s1678-58782005000400013
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1590/s1678-58782005000400013

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