MBE growth and characterization of 'Sn IND.1-X' 'Eu IND.X' Te (2003)
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: EFEITO MOSSBAUER, SEMICONDUTORES
ABNT
UETA, A Y et al. MBE growth and characterization of 'Sn IND.1-X' 'Eu IND.X' Te. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 06 ago. 2024.APA
Ueta, A. Y., Rappl, P. H. O., Closs, H., Abramof, E., Chitta, V. A., Coaquira, J. A. H., et al. (2003). MBE growth and characterization of 'Sn IND.1-X' 'Eu IND.X' Te. In Book of Abstract. Fortaleza: DF/UFC.NLM
Ueta AY, Rappl PHO, Closs H, Abramof E, Chitta VA, Coaquira JAH, Oliveira Junior NF, Bauer G. MBE growth and characterization of 'Sn IND.1-X' 'Eu IND.X' Te. Book of Abstract. 2003 ;[citado 2024 ago. 06 ]Vancouver
Ueta AY, Rappl PHO, Closs H, Abramof E, Chitta VA, Coaquira JAH, Oliveira Junior NF, Bauer G. MBE growth and characterization of 'Sn IND.1-X' 'Eu IND.X' Te. Book of Abstract. 2003 ;[citado 2024 ago. 06 ]