Sn 'O IND.2' extended gate field-effect transistor as pH sensor (2006)
Fonte: Brazilian Journal of Physics. Unidades: FFCLRP, EP
Assuntos: TRANSISTORES, SENSORES BIOMÉDICOS
ABNT
BATISTA, P. D. et al. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics, v. 36, n. 2A, p. 478-481, 2006Tradução . . Acesso em: 02 nov. 2024.APA
Batista, P. D., Graeff, C. F. de O., Ramírez Fernandez, F. J., & Marques, F. das C. (2006). Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics, 36( 2A), 478-481.NLM
Batista PD, Graeff CF de O, Ramírez Fernandez FJ, Marques F das C. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics. 2006 ; 36( 2A): 478-481.[citado 2024 nov. 02 ]Vancouver
Batista PD, Graeff CF de O, Ramírez Fernandez FJ, Marques F das C. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics. 2006 ; 36( 2A): 478-481.[citado 2024 nov. 02 ]