Filtros : "TOPOLOGIA" "FAZZIO, ADALBERTO" Removido: "Emmendoerfer Junior, Hélio" Limpar

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  • Source: SCIENTIFIC REPORTS. Unidade: IF

    Subjects: SPIN, TOPOLOGIA

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    • ABNT

      PADILHA, J. E. et al. A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds. SCIENTIFIC REPORTS, v. 6, p. 26123 , 2016Tradução . . Disponível em: http://www.nature.com/articles/srep26123. Acesso em: 18 ago. 2024.
    • APA

      Padilha, J. E., Pontes, R. B., Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2016). A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds. SCIENTIFIC REPORTS, 6, 26123 . doi:10.1038/srep26123
    • NLM

      Padilha JE, Pontes RB, Schmidt TM, Miwa RH, Fazzio A. A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds [Internet]. SCIENTIFIC REPORTS. 2016 ; 6 26123 .[citado 2024 ago. 18 ] Available from: http://www.nature.com/articles/srep26123
    • Vancouver

      Padilha JE, Pontes RB, Schmidt TM, Miwa RH, Fazzio A. A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds [Internet]. SCIENTIFIC REPORTS. 2016 ; 6 26123 .[citado 2024 ago. 18 ] Available from: http://www.nature.com/articles/srep26123
  • Source: PHYSICAL CHEMISTRY CHEMICAL PHYSICS. Unidade: IF

    Subjects: SPIN, TOPOLOGIA

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    • ABNT

      PADILHA, Jose Eduardo e MIWA, Roberto Hiroki e FAZZIO, Adalberto. Directional dependence of the electronic and transport properties of 2D borophene and borophane. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v. 18, n. 36, p. 25491-25496, 2016Tradução . . Disponível em: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c6cp05092a#!divAbstract. Acesso em: 18 ago. 2024.
    • APA

      Padilha, J. E., Miwa, R. H., & Fazzio, A. (2016). Directional dependence of the electronic and transport properties of 2D borophene and borophane. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 18( 36), 25491-25496. doi:10.1039/c6cp05092a
    • NLM

      Padilha JE, Miwa RH, Fazzio A. Directional dependence of the electronic and transport properties of 2D borophene and borophane [Internet]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 2016 ; 18( 36): 25491-25496.[citado 2024 ago. 18 ] Available from: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c6cp05092a#!divAbstract
    • Vancouver

      Padilha JE, Miwa RH, Fazzio A. Directional dependence of the electronic and transport properties of 2D borophene and borophane [Internet]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 2016 ; 18( 36): 25491-25496.[citado 2024 ago. 18 ] Available from: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c6cp05092a#!divAbstract
  • Source: PHYSICAL REVIEW B. Unidade: IF

    Subjects: SPIN, TOPOLOGIA

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    • ABNT

      ACOSTA, Carlos Augusto Mera et al. Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator. PHYSICAL REVIEW B, v. 94, n. 4, p. 041302, 2016Tradução . . Disponível em: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.041302. Acesso em: 18 ago. 2024.
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      Acosta, C. A. M., Babilonia, O., Abdalla, L., & Fazzio, A. (2016). Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator. PHYSICAL REVIEW B, 94( 4), 041302. doi:10.1103/PhysRevB.94.041302
    • NLM

      Acosta CAM, Babilonia O, Abdalla L, Fazzio A. Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator [Internet]. PHYSICAL REVIEW B. 2016 ; 94( 4): 041302.[citado 2024 ago. 18 ] Available from: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.041302
    • Vancouver

      Acosta CAM, Babilonia O, Abdalla L, Fazzio A. Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator [Internet]. PHYSICAL REVIEW B. 2016 ; 94( 4): 041302.[citado 2024 ago. 18 ] Available from: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.041302
  • Source: JOURNAL OF PHYSICS-CONDENSED MATTER. Unidade: IF

    Subjects: TOPOLOGIA, ESTRUTURA ELETRÔNICA

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      ABDALLA, Leonardo Batoni et al. Topological phase transitions of '('BI' IND. x''SB' IND. 1−x') IND. 2''SE' IND. 3' alloys by density functional theory. JOURNAL OF PHYSICS-CONDENSED MATTER, v. 27, n. 25, p. 255501, 2015Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/27/25/255501. Acesso em: 18 ago. 2024.
    • APA

      Abdalla, L. B., Padilha, J. E., Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2015). Topological phase transitions of '('BI' IND. x''SB' IND. 1−x') IND. 2''SE' IND. 3' alloys by density functional theory. JOURNAL OF PHYSICS-CONDENSED MATTER, 27( 25), 255501. doi:10.1088/0953-8984/27/25/255501
    • NLM

      Abdalla LB, Padilha JE, Schmidt TM, Miwa RH, Fazzio A. Topological phase transitions of '('BI' IND. x''SB' IND. 1−x') IND. 2''SE' IND. 3' alloys by density functional theory [Internet]. JOURNAL OF PHYSICS-CONDENSED MATTER. 2015 ; 27( 25): 255501.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1088/0953-8984/27/25/255501
    • Vancouver

      Abdalla LB, Padilha JE, Schmidt TM, Miwa RH, Fazzio A. Topological phase transitions of '('BI' IND. x''SB' IND. 1−x') IND. 2''SE' IND. 3' alloys by density functional theory [Internet]. JOURNAL OF PHYSICS-CONDENSED MATTER. 2015 ; 27( 25): 255501.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1088/0953-8984/27/25/255501
  • Unidade: IF

    Subjects: SPIN, TOPOLOGIA

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    • ABNT

      ACOSTA, Carlos Augusto Mera et al. Topological phases in triangular lattices of 'RU' adsorbed on graphene: ab-initio calculations. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/pdf/1401.5809v2.pdf. Acesso em: 18 ago. 2024. , 2014
    • APA

      Acosta, C. A. M., Lima, M. P., Miwa, R. H., Silva, A. J. R. da, & Fazzio, A. (2014). Topological phases in triangular lattices of 'RU' adsorbed on graphene: ab-initio calculations. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/pdf/1401.5809v2.pdf
    • NLM

      Acosta CAM, Lima MP, Miwa RH, Silva AJR da, Fazzio A. Topological phases in triangular lattices of 'RU' adsorbed on graphene: ab-initio calculations [Internet]. 2014 ;[citado 2024 ago. 18 ] Available from: http://arxiv.org/pdf/1401.5809v2.pdf
    • Vancouver

      Acosta CAM, Lima MP, Miwa RH, Silva AJR da, Fazzio A. Topological phases in triangular lattices of 'RU' adsorbed on graphene: ab-initio calculations [Internet]. 2014 ;[citado 2024 ago. 18 ] Available from: http://arxiv.org/pdf/1401.5809v2.pdf
  • Source: PHYSICAL REVIEW B. Unidade: IF

    Subjects: TOPOLOGIA, SPIN

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    • ABNT

      MERA ACOSTA, Carlos Augusto et al. Topological phases in triangular lattices of 'RU' adsorbed on graphene: Ab initio calculation. PHYSICAL REVIEW B, v. 89, n. 15, p. 155438, 2014Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.89.155438. Acesso em: 18 ago. 2024.
    • APA

      Mera Acosta, C. A., Miwa, R. H., Lima, M. P., Silva, A. J. R. da, & Fazzio, A. (2014). Topological phases in triangular lattices of 'RU' adsorbed on graphene: Ab initio calculation. PHYSICAL REVIEW B, 89( 15), 155438. doi:10.1103/PhysRevB.89.155438
    • NLM

      Mera Acosta CA, Miwa RH, Lima MP, Silva AJR da, Fazzio A. Topological phases in triangular lattices of 'RU' adsorbed on graphene: Ab initio calculation [Internet]. PHYSICAL REVIEW B. 2014 ; 89( 15): 155438.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1103/PhysRevB.89.155438
    • Vancouver

      Mera Acosta CA, Miwa RH, Lima MP, Silva AJR da, Fazzio A. Topological phases in triangular lattices of 'RU' adsorbed on graphene: Ab initio calculation [Internet]. PHYSICAL REVIEW B. 2014 ; 89( 15): 155438.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1103/PhysRevB.89.155438
  • Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF

    Assunto: TOPOLOGIA

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    • ABNT

      SEIXAS, L. et al. Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3'. JOURNAL OF APPLIED PHYSICS, v. 113, n. ja2013, p. 023705, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4773325. Acesso em: 18 ago. 2024.
    • APA

      Seixas, L., Abdalla, L. B., Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2013). Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3'. JOURNAL OF APPLIED PHYSICS, 113( ja2013), 023705. doi:10.1063/1.4773325
    • NLM

      Seixas L, Abdalla LB, Schmidt TM, Miwa RH, Fazzio A. Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3' [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 113( ja2013): 023705.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1063/1.4773325
    • Vancouver

      Seixas L, Abdalla LB, Schmidt TM, Miwa RH, Fazzio A. Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3' [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 113( ja2013): 023705.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1063/1.4773325
  • Source: PHYSICAL REVIEW B. Unidade: IF

    Subjects: TOPOLOGIA, SPIN

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    • ABNT

      PADILHA, J. E. et al. Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy. PHYSICAL REVIEW B, v. no 2013, n. 20, p. 201106, 2013Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.88.201106. Acesso em: 18 ago. 2024.
    • APA

      Padilha, J. E., Pontes, R. B., Seixas, L., Silva, A. J. R. da, & Fazzio, A. (2013). Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy. PHYSICAL REVIEW B, no 2013( 20), 201106. doi:10.1103/PhysRevB.88.201106
    • NLM

      Padilha JE, Pontes RB, Seixas L, Silva AJR da, Fazzio A. Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy [Internet]. PHYSICAL REVIEW B. 2013 ; no 2013( 20): 201106.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1103/PhysRevB.88.201106
    • Vancouver

      Padilha JE, Pontes RB, Seixas L, Silva AJR da, Fazzio A. Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy [Internet]. PHYSICAL REVIEW B. 2013 ; no 2013( 20): 201106.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1103/PhysRevB.88.201106

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