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Artigo de periodico
Electrochemical lithiation of silicon clathrate-II (2012)
Langer, Thorsten; Dupke, Sven; Trill, Henning; Passerini, Stefano; Eckert, Hellmut ; Pöttgen, Rainer; Winter, Martin
Source: Journal of the Eletrochemical Society. Unidade: IFSC
Subjects: SILICIO (PROPRIEDADES), ELETROQUÍMICA, NANOTECNOLOGIA
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ABNT
LANGER, Thorsten et al. Electrochemical lithiation of silicon clathrate-II. Journal of the Eletrochemical Society, v. 159, n. 8, p. A1318-A1322, 2012Tradução . . Disponível em: https://doi.org/10.1149/2.082208jes. Acesso em: 14 out. 2024.
APA
Langer, T., Dupke, S., Trill, H., Passerini, S., Eckert, H., Pöttgen, R., & Winter, M. (2012). Electrochemical lithiation of silicon clathrate-II. Journal of the Eletrochemical Society, 159( 8), A1318-A1322. doi:10.1149/2.082208jes
NLM
Langer T, Dupke S, Trill H, Passerini S, Eckert H, Pöttgen R, Winter M. Electrochemical lithiation of silicon clathrate-II [Internet]. Journal of the Eletrochemical Society. 2012 ; 159( 8): A1318-A1322.[citado 2024 out. 14 ] Available from: https://doi.org/10.1149/2.082208jes
Vancouver
Langer T, Dupke S, Trill H, Passerini S, Eckert H, Pöttgen R, Winter M. Electrochemical lithiation of silicon clathrate-II [Internet]. Journal of the Eletrochemical Society. 2012 ; 159( 8): A1318-A1322.[citado 2024 out. 14 ] Available from: https://doi.org/10.1149/2.082208jes
Artigo de periodico
New hypodiphosphates of the alkali metals: synthesis, crystal structure and vibrational spectra of the hypodiphosphates(IV) 'M IND. 2'[('H IND.2''P IND.2''O IND.6')('H IND.4''P. IND.2''O IND.6')] (M='RB' and 'CS') (2012)
Wu, Peng; Wiegand, Thomas; Eckert, Hellmut ; Gjikaj, Mimoza
Source: Journal of Solid State Chemistry. Unidade: IFSC
Subjects: SILICIO (PROPRIEDADES), QUÍMICA INORGÂNICA, ESPECTROSCOPIA RAMAN, METAIS ALCALINOS
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ABNT
WU, Peng et al. New hypodiphosphates of the alkali metals: synthesis, crystal structure and vibrational spectra of the hypodiphosphates(IV) 'M IND. 2'[('H IND.2''P IND.2''O IND.6')('H IND.4''P. IND.2''O IND.6')] (M='RB' and 'CS'). Journal of Solid State Chemistry, v. 194, p. 212-218, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.jssc.2012.05.015. Acesso em: 14 out. 2024.
APA
Wu, P., Wiegand, T., Eckert, H., & Gjikaj, M. (2012). New hypodiphosphates of the alkali metals: synthesis, crystal structure and vibrational spectra of the hypodiphosphates(IV) 'M IND. 2'[('H IND.2''P IND.2''O IND.6')('H IND.4''P. IND.2''O IND.6')] (M='RB' and 'CS'). Journal of Solid State Chemistry, 194, 212-218. doi:10.1016/j.jssc.2012.05.015
NLM
Wu P, Wiegand T, Eckert H, Gjikaj M. New hypodiphosphates of the alkali metals: synthesis, crystal structure and vibrational spectra of the hypodiphosphates(IV) 'M IND. 2'[('H IND.2''P IND.2''O IND.6')('H IND.4''P. IND.2''O IND.6')] (M='RB' and 'CS') [Internet]. Journal of Solid State Chemistry. 2012 ; 194 212-218.[citado 2024 out. 14 ] Available from: https://doi.org/10.1016/j.jssc.2012.05.015
Vancouver
Wu P, Wiegand T, Eckert H, Gjikaj M. New hypodiphosphates of the alkali metals: synthesis, crystal structure and vibrational spectra of the hypodiphosphates(IV) 'M IND. 2'[('H IND.2''P IND.2''O IND.6')('H IND.4''P. IND.2''O IND.6')] (M='RB' and 'CS') [Internet]. Journal of Solid State Chemistry. 2012 ; 194 212-218.[citado 2024 out. 14 ] Available from: https://doi.org/10.1016/j.jssc.2012.05.015
Artigo de periodico
Y'PD''SN' and Y'PD IND. 2''SN': structure, 'ANTIPOT. 89 Y' solid state NMR and 'ANTIPOT. 119 SN' Mössbauer spectroscopy (2012)
Höting, Christoph; Eckert, Hellmut ; Langer, Thorsten; Schellenberg, Inga; Pöttgen, Rainer
Source: Journal of Solid State Chemistry. Unidade: IFSC
Subjects: SILICIO (PROPRIEDADES), ELETROQUÍMICA, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HÖTING, Christoph et al. Y'PD''SN' and Y'PD IND. 2''SN': structure, 'ANTIPOT. 89 Y' solid state NMR and 'ANTIPOT. 119 SN' Mössbauer spectroscopy. Journal of Solid State Chemistry, v. 190, p. 216-220, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.jssc.2012.02.046. Acesso em: 14 out. 2024.
APA
Höting, C., Eckert, H., Langer, T., Schellenberg, I., & Pöttgen, R. (2012). Y'PD''SN' and Y'PD IND. 2''SN': structure, 'ANTIPOT. 89 Y' solid state NMR and 'ANTIPOT. 119 SN' Mössbauer spectroscopy. Journal of Solid State Chemistry, 190, 216-220. doi:10.1016/j.jssc.2012.02.046
NLM
Höting C, Eckert H, Langer T, Schellenberg I, Pöttgen R. Y'PD''SN' and Y'PD IND. 2''SN': structure, 'ANTIPOT. 89 Y' solid state NMR and 'ANTIPOT. 119 SN' Mössbauer spectroscopy [Internet]. Journal of Solid State Chemistry. 2012 ; 190 216-220.[citado 2024 out. 14 ] Available from: https://doi.org/10.1016/j.jssc.2012.02.046
Vancouver
Höting C, Eckert H, Langer T, Schellenberg I, Pöttgen R. Y'PD''SN' and Y'PD IND. 2''SN': structure, 'ANTIPOT. 89 Y' solid state NMR and 'ANTIPOT. 119 SN' Mössbauer spectroscopy [Internet]. Journal of Solid State Chemistry. 2012 ; 190 216-220.[citado 2024 out. 14 ] Available from: https://doi.org/10.1016/j.jssc.2012.02.046
Artigo de periodico
Internal strain distribution in freestanding porous silicon (2009)
Pusep, Yuri A ; Rodrigues, A. D.; Galzerani, J. C.; Arce, R. D.; Koropecki, R. R.; Comedi, D
Source: Journal of the Eletrochemical Society. Unidade: IFSC
Subjects: FILMES FINOS, SILICIO (PROPRIEDADES), ELETROQUÍMICA, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Internal strain distribution in freestanding porous silicon. Journal of the Eletrochemical Society, v. 156, n. 12, p. K215-K217, 2009Tradução . . Disponível em: https://doi.org/10.1149/1.3225832. Acesso em: 14 out. 2024.
APA
Pusep, Y. A., Rodrigues, A. D., Galzerani, J. C., Arce, R. D., Koropecki, R. R., & Comedi, D. (2009). Internal strain distribution in freestanding porous silicon. Journal of the Eletrochemical Society, 156( 12), K215-K217. doi:10.1149/1.3225832
NLM
Pusep YA, Rodrigues AD, Galzerani JC, Arce RD, Koropecki RR, Comedi D. Internal strain distribution in freestanding porous silicon [Internet]. Journal of the Eletrochemical Society. 2009 ; 156( 12): K215-K217.[citado 2024 out. 14 ] Available from: https://doi.org/10.1149/1.3225832
Vancouver
Pusep YA, Rodrigues AD, Galzerani JC, Arce RD, Koropecki RR, Comedi D. Internal strain distribution in freestanding porous silicon [Internet]. Journal of the Eletrochemical Society. 2009 ; 156( 12): K215-K217.[citado 2024 out. 14 ] Available from: https://doi.org/10.1149/1.3225832

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