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Artigo de periodico
Electrical and optical characterizations of erbium doped MPS/PANI heterojunctions (2020)
Toledo, R. P; Huanca, Danilo Roque ; Oliveira, A F; Santos Filho, Sebastião Gomes dos ; Salcedo, Walter Jaimes
Source: Applied Surface Science. Unidade: EP
Assunto: SILICIO
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ABNT
TOLEDO, R. P et al. Electrical and optical characterizations of erbium doped MPS/PANI heterojunctions. Applied Surface Science, v. 529, p. 146994, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2020.146994. Acesso em: 10 jan. 2026.
APA
Toledo, R. P., Huanca, D. R., Oliveira, A. F., Santos Filho, S. G. dos, & Salcedo, W. J. (2020). Electrical and optical characterizations of erbium doped MPS/PANI heterojunctions. Applied Surface Science, 529, 146994. doi:10.1016/j.apsusc.2020.146994
NLM
Toledo RP, Huanca DR, Oliveira AF, Santos Filho SG dos, Salcedo WJ. Electrical and optical characterizations of erbium doped MPS/PANI heterojunctions [Internet]. Applied Surface Science. 2020 ;529 146994.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1016/j.apsusc.2020.146994
Vancouver
Toledo RP, Huanca DR, Oliveira AF, Santos Filho SG dos, Salcedo WJ. Electrical and optical characterizations of erbium doped MPS/PANI heterojunctions [Internet]. Applied Surface Science. 2020 ;529 146994.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1016/j.apsusc.2020.146994
Trabalho de evento-resumo
Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films (2013)
Zanatta, Antonio Ricardo ; Ingram, D. C.; Kordesch, M. E.
Source: Program. Conference titles: International Conference on the Structure of Non Crystalline Materials - NCM. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. 2013, Anais.. Trento: University of Trento, 2013. . Acesso em: 10 jan. 2026.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2013). Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. In Program. Trento: University of Trento.
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. Program. 2013 ;[citado 2026 jan. 10 ]
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. Program. 2013 ;[citado 2026 jan. 10 ]
Artigo de periodico
Energy states of phosphorous donor in silicon in fields up to 18 T (2010)
Alfonso, A. Bruno; Lewis, R. A.; Hai, Guo-Qiang ; Vickers, R. E. M.
Source: Journal of Low Temperature Physics. Unidade: IFSC
Subjects: ENERGIA (ESTADO), SILICIO, ESPECTROSCOPIA, SUPERCONDUTIVIDADE, MATERIAIS ELETRÔNICOS, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALFONSO, A. Bruno et al. Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, v. 159, n. 1/2, p. 226-229, 2010Tradução . . Disponível em: https://doi.org/10.1007/s10909-009-0119-1. Acesso em: 10 jan. 2026.
APA
Alfonso, A. B., Lewis, R. A., Hai, G. -Q., & Vickers, R. E. M. (2010). Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, 159( 1/2), 226-229. doi:10.1007/s10909-009-0119-1
NLM
Alfonso AB, Lewis RA, Hai G-Q, Vickers REM. Energy states of phosphorous donor in silicon in fields up to 18 T [Internet]. Journal of Low Temperature Physics. 2010 ; 159( 1/2): 226-229.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1007/s10909-009-0119-1
Vancouver
Alfonso AB, Lewis RA, Hai G-Q, Vickers REM. Energy states of phosphorous donor in silicon in fields up to 18 T [Internet]. Journal of Low Temperature Physics. 2010 ; 159( 1/2): 226-229.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1007/s10909-009-0119-1
Artigo de periodico
Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films (2007)
Zanatta, Antonio Ricardo ; Ferri, Fabio Aparecido
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO, EXPANSÃO DO CALOR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e FERRI, Fabio Aparecido. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, v. 102, n. 4, p. 043509-1-043509-5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2770823. Acesso em: 10 jan. 2026.
APA
Zanatta, A. R., & Ferri, F. A. (2007). Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, 102( 4), 043509-1-043509-5. doi:10.1063/1.2770823
NLM
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1063/1.2770823
Vancouver
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1063/1.2770823

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