ReP USP - Resultado da busca

Filtros : "SILÍCIO" "Bordallo, Caio Cesar Mendes" Removidos: "Fernandes, Adalton Mazetti" "IFSC" Limpar

Filtros

Artigo de periodico
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016)
Bordallo, Caio Cesar Mendes ; Claeys, Cor ; Thean, Aaron; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Agopian, Paula Ghedini Der ; Sivieri, Victor de Bodt; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: TRANSISTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, v. 63, n. 7, p. 2930-2935, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2559580. Acesso em: 02 nov. 2024.
APA
Bordallo, C. C. M., Claeys, C., Thean, A., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2016). Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, 63( 7), 2930-2935. doi:10.1109/ted.2016.2559580
NLM
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Vancouver
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Artigo de periodico
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013)
Agopian, Paula Ghedini Der ; Bordallo, Caio Cesar Mendes ; Simoen, Eddy ; Martino, João Antonio ; Claeys, Cor
Source: Solid-State Electronics Volume 90, December 2013, Pages 155-159. Unidade: EP
Subjects: SILÍCIO, IRRADIAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, v. 90, p. 155-159, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.037. Acesso em: 02 nov. 2024.
APA
Agopian, P. G. D., Bordallo, C. C. M., Simoen, E., Martino, J. A., & Claeys, C. (2013). Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, 90, 155-159. doi:10.1016/j.sse.2013.02.037
NLM
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Vancouver
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037

Digital Library of Intellectual Production of Universidade de São Paulo 2012 - 2024