Source: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. Unidade: IF
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BURGI, Juan et al. (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, v. 74, n. 1, p. 10301, 2016Tradução . . Disponível em: http://www.epjap.org/articles/epjap/abs/2016/04/ap150446/ap150446.html. Acesso em: 02 nov. 2024.APA
Burgi, J., Garcia Molleja, J., Bolmaro, R., Piccoli, M., Bemporad, E., Feugeas, J., & Craievich, A. F. (2016). (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 74( 1), 10301. doi:10.1051/epjap/2016150446NLM
Burgi J, Garcia Molleja J, Bolmaro R, Piccoli M, Bemporad E, Feugeas J, Craievich AF. (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique [Internet]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. 2016 ; 74( 1): 10301.[citado 2024 nov. 02 ] Available from: http://www.epjap.org/articles/epjap/abs/2016/04/ap150446/ap150446.htmlVancouver
Burgi J, Garcia Molleja J, Bolmaro R, Piccoli M, Bemporad E, Feugeas J, Craievich AF. (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique [Internet]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. 2016 ; 74( 1): 10301.[citado 2024 nov. 02 ] Available from: http://www.epjap.org/articles/epjap/abs/2016/04/ap150446/ap150446.html
