Source: Applied Surface Science. Unidades: IFSC, IF
Subjects: SPIN, POLARIZAÇÃO, FERROMAGNETISMO, SEMICONDUTORES
ABNT
RODRIGUES, S. C. P. et al. The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor. Applied Surface Science, v. No 2008, n. 3, p. 709-711, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2008.07.015. Acesso em: 04 nov. 2024.APA
Rodrigues, S. C. P., Araújo, Y. R. V., Sipahi, G. M., Scolfaro, L. M. R., & Silva Junior, E. F. (2008). The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor. Applied Surface Science, No 2008( 3), 709-711. doi:10.1016/j.apsusc.2008.07.015NLM
Rodrigues SCP, Araújo YRV, Sipahi GM, Scolfaro LMR, Silva Junior EF. The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor [Internet]. Applied Surface Science. 2008 ; No 2008( 3): 709-711.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.apsusc.2008.07.015Vancouver
Rodrigues SCP, Araújo YRV, Sipahi GM, Scolfaro LMR, Silva Junior EF. The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor [Internet]. Applied Surface Science. 2008 ; No 2008( 3): 709-711.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.apsusc.2008.07.015