ReP USP - Resultado da busca

Artigo de periodico
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs (2022)
Souza, Adelcio Marques de; Celino, Daniel Ricardo; Ragi, Regiane; Romero, Murilo Araujo
Source: Microelectronics Journal. Unidade: EESC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA, ENGENHARIA ELÉTRICA
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ABNT
SOUZA, Adelcio Marques de et al. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs. Microelectronics Journal, v. 119, p. 1-8, 2022Tradução . . Disponível em: http://dx.doi.org/10.1016/j.mejo.2021.105324. Acesso em: 10 nov. 2024.
APA
Souza, A. M. de, Celino, D. R., Ragi, R., & Romero, M. A. (2022). Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs. Microelectronics Journal, 119, 1-8. doi:10.1016/j.mejo.2021.105324
NLM
Souza AM de, Celino DR, Ragi R, Romero MA. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs [Internet]. Microelectronics Journal. 2022 ; 119 1-8.[citado 2024 nov. 10 ] Available from: http://dx.doi.org/10.1016/j.mejo.2021.105324
Vancouver
Souza AM de, Celino DR, Ragi R, Romero MA. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs [Internet]. Microelectronics Journal. 2022 ; 119 1-8.[citado 2024 nov. 10 ] Available from: http://dx.doi.org/10.1016/j.mejo.2021.105324
Artigo de periodico
Backside contact effect on the morphological and optical features of porous silicon photonic crystals (2009)
Huanca, Danilo Roque ; Raimundo, Daniel Scodeler; Salcedo, Walter Jaimes
Source: Microelectronics Journal. Unidade: EP
Subjects: NANOTECNOLOGIA, MICROELETRÔNICA, ELETROQUÍMICA
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ABNT
HUANCA, Danilo Roque e RAIMUNDO, Daniel Scodeler e SALCEDO, Walter Jaimes. Backside contact effect on the morphological and optical features of porous silicon photonic crystals. Microelectronics Journal, v. 40, n. 4-5, p. 744-748, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.11.005. Acesso em: 10 nov. 2024.
APA
Huanca, D. R., Raimundo, D. S., & Salcedo, W. J. (2009). Backside contact effect on the morphological and optical features of porous silicon photonic crystals. Microelectronics Journal, 40( 4-5), 744-748. doi:10.1016/j.mejo.2008.11.005
NLM
Huanca DR, Raimundo DS, Salcedo WJ. Backside contact effect on the morphological and optical features of porous silicon photonic crystals [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 744-748.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.005
Vancouver
Huanca DR, Raimundo DS, Salcedo WJ. Backside contact effect on the morphological and optical features of porous silicon photonic crystals [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 744-748.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.005
Artigo de periodico
Anodic porous alumina structural characteristics study based on SEM image processing and analysis (2009)
Raimundo, Daniel Scodeler; Calíope, Priscila Braga; Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Microelectronics Journal. Unidade: EP
Subjects: NANOTECNOLOGIA, MICROELETRÔNICA
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ABNT
RAIMUNDO, Daniel Scodeler et al. Anodic porous alumina structural characteristics study based on SEM image processing and analysis. Microelectronics Journal, v. 40, n. 4-5, p. 844-847, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.11.024. Acesso em: 10 nov. 2024.
APA
Raimundo, D. S., Calíope, P. B., Huanca, D. R., & Salcedo, W. J. (2009). Anodic porous alumina structural characteristics study based on SEM image processing and analysis. Microelectronics Journal, 40( 4-5), 844-847. doi:10.1016/j.mejo.2008.11.024
NLM
Raimundo DS, Calíope PB, Huanca DR, Salcedo WJ. Anodic porous alumina structural characteristics study based on SEM image processing and analysis [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 844-847.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.024
Vancouver
Raimundo DS, Calíope PB, Huanca DR, Salcedo WJ. Anodic porous alumina structural characteristics study based on SEM image processing and analysis [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 844-847.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.024
Artigo de periodico
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 (2005)
Monte, A F G; Cunha, J F R; Soler, M A P; Silva, S W; Quivy, A. A.; Morais, P C
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA
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ABNT
MONTE, A F G et al. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, v. 36, n. 3-6, p. 194-196, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.003. Acesso em: 10 nov. 2024.
APA
Monte, A. F. G., Cunha, J. F. R., Soler, M. A. P., Silva, S. W., Quivy, A. A., & Morais, P. C. (2005). Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, 36( 3-6), 194-196. doi:10.1016/j.mejo.2005.02.003
NLM
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Vancouver
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Artigo de periodico
Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning (2005)
Morelhão, Sérgio Luiz; Avanci, L H; Freitas, R; Quivy, A. A.
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, DIFRAÇÃO POR RAIOS X, NANOTECNOLOGIA
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ABNT
MORELHÃO, Sérgio Luiz et al. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Microelectronics Journal, v. 36, n. 3-6, p. 219-222, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.010. Acesso em: 10 nov. 2024.
APA
Morelhão, S. L., Avanci, L. H., Freitas, R., & Quivy, A. A. (2005). Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Microelectronics Journal, 36( 3-6), 219-222. doi:10.1016/j.mejo.2005.02.010
NLM
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 219-222.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.010
Vancouver
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 219-222.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.010
Artigo de periodico-carta/editorial
Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] (2005)
Silva Junior, E. F. da; Henini, M; Scolfaro, Luisa Maria Ribeiro; Sipahi, Guilherme Matos
Source: Microelectronics Journal. Unidades: IF, IFSC
Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, NANOTECNOLOGIA, ESTRUTURA DOS MATERIAIS
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ABNT
SILVA JUNIOR, E. F. da et al. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 10 nov. 2024. , 2005
APA
Silva Junior, E. F. da, Henini, M., Scolfaro, L. M. R., & Sipahi, G. M. (2005). Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
NLM
Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2024 nov. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Vancouver
Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2024 nov. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1

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