Ionizing radiation hardness tests of GaN HEMTs for harsh environments (2021)
Source: Microelectronics Reliability. Unidade: IF
Subjects: FÍSICA NUCLEAR, RADIAÇÃO IONIZANTE, ELETRÔNICA QUÂNTICA, NANOTECNOLOGIA
ABNT
VILAS BÔAS, Alexis C. et al. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. Microelectronics Reliability, v. 116, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2020.114000. Acesso em: 18 nov. 2024.APA
Vilas Bôas, A. C., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R., Medina, N. H., Seixas, L. E., et al. (2021). Ionizing radiation hardness tests of GaN HEMTs for harsh environments. Microelectronics Reliability, 116. doi:10.1016/j.microrel.2020.114000NLM
Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Ionizing radiation hardness tests of GaN HEMTs for harsh environments [Internet]. Microelectronics Reliability. 2021 ; 116[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.microrel.2020.114000Vancouver
Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Ionizing radiation hardness tests of GaN HEMTs for harsh environments [Internet]. Microelectronics Reliability. 2021 ; 116[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.microrel.2020.114000