On the modelling of the C-V characteristics of semiconductor nanowire transistors (2010)
Source: Proceedings. Conference titles: Argentine School of Micro-Nanoelectronics, Technology and Applications. Unidade: EESC
Subjects: TRANSISTORES, EQUAÇÕES NÃO LINEARES, PROCESSOS DE POISSON
ABNT
NOBREGA, Rafael Vinicius Tayette da e RAGI, Regiane e ROMERO, Murilo Araujo. On the modelling of the C-V characteristics of semiconductor nanowire transistors. 2010, Anais.. Montevideo: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2010. Disponível em: http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376. Acesso em: 08 out. 2024.APA
Nobrega, R. V. T. da, Ragi, R., & Romero, M. A. (2010). On the modelling of the C-V characteristics of semiconductor nanowire transistors. In Proceedings. Montevideo: Escola de Engenharia de São Carlos, Universidade de São Paulo. Recuperado de http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376NLM
Nobrega RVT da, Ragi R, Romero MA. On the modelling of the C-V characteristics of semiconductor nanowire transistors [Internet]. Proceedings. 2010 ;[citado 2024 out. 08 ] Available from: http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376Vancouver
Nobrega RVT da, Ragi R, Romero MA. On the modelling of the C-V characteristics of semiconductor nanowire transistors [Internet]. Proceedings. 2010 ;[citado 2024 out. 08 ] Available from: http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376