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Filtros : "ENERGIA ELÉTRICA" "MARTINO, JOÃO ANTONIO" Removidos: "KANASHIRO, ARNALDO GAKIYA" "IEEE ESW-Brasil 2023" Limpar

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  • Artigo de periodico

    Analysis of the substrate effect on enhancement mode SOInMOSFET effective channel length and series resistence extraction at 77K (1998)

    Pavanello, Marcelo Antonio ; Nicolett, Aparecido Sirley; Martino, João Antonio

    Source: Journal de Physique IV. Unidade: EP

    Assunto: ENERGIA ELÉTRICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      PAVANELLO, Marcelo Antonio e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Analysis of the substrate effect on enhancement mode SOInMOSFET effective channel length and series resistence extraction at 77K. Journal de Physique IV, v. 8, p. 49-52, 1998Tradução . . Disponível em: https://doi.org/10.1051/jp4:1998312. Acesso em: 14 nov. 2024.

    • APA

      Pavanello, M. A., Nicolett, A. S., & Martino, J. A. (1998). Analysis of the substrate effect on enhancement mode SOInMOSFET effective channel length and series resistence extraction at 77K. Journal de Physique IV, 8, 49-52. doi:10.1051/jp4:1998312

    • NLM

      Pavanello MA, Nicolett AS, Martino JA. Analysis of the substrate effect on enhancement mode SOInMOSFET effective channel length and series resistence extraction at 77K [Internet]. Journal de Physique IV. 1998 ;8 49-52.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1051/jp4:1998312

    • Vancouver

      Pavanello MA, Nicolett AS, Martino JA. Analysis of the substrate effect on enhancement mode SOInMOSFET effective channel length and series resistence extraction at 77K [Internet]. Journal de Physique IV. 1998 ;8 49-52.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1051/jp4:1998312

  • Artigo de periodico

    Back gate voltage and buried oxide thickness influences on the series resistence of fully depleted SOI MOSFETs at 77K (1998)

    Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor

    Source: Journal de Physique IV. Unidade: EP

    Assunto: ENERGIA ELÉTRICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      NICOLETT, Aparecido Sirley et al. Back gate voltage and buried oxide thickness influences on the series resistence of fully depleted SOI MOSFETs at 77K. Journal de Physique IV, v. 8, p. 25-28, 1998Tradução . . Disponível em: https://doi.org/10.1051/jp4:1998306. Acesso em: 14 nov. 2024.

    • APA

      Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1998). Back gate voltage and buried oxide thickness influences on the series resistence of fully depleted SOI MOSFETs at 77K. Journal de Physique IV, 8, 25-28. doi:10.1051/jp4:1998306

    • NLM

      Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage and buried oxide thickness influences on the series resistence of fully depleted SOI MOSFETs at 77K [Internet]. Journal de Physique IV. 1998 ;8 25-28.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1051/jp4:1998306

    • Vancouver

      Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage and buried oxide thickness influences on the series resistence of fully depleted SOI MOSFETs at 77K [Internet]. Journal de Physique IV. 1998 ;8 25-28.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1051/jp4:1998306
  • 1

1 - 2 (2 records)

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