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Trabalho de evento
Laser interference structuring of a-GeN for the production of optical diffraction gratings (2003)
Mulato, Marcelo; Zanatta, Antonio Ricardo ; Toet, D.; Chambouleyron, I. E.
Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Spring Meeting. Unidades: FFCLRP, IFSC
Subjects: CRISTALIZAÇÃO, CRISTALOGRAFIA, FILMES FINOS, LASER, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MULATO, Marcelo et al. Laser interference structuring of a-GeN for the production of optical diffraction gratings. 2003, Anais.. Warrendale: Materials Research Society - MRS, 2003. . Acesso em: 02 nov. 2024.
APA
Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2003). Laser interference structuring of a-GeN for the production of optical diffraction gratings. In Materials Research Society Symposium Proceedings (Vol. 762). Warrendale: Materials Research Society - MRS.
NLM
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. Laser interference structuring of a-GeN for the production of optical diffraction gratings. Materials Research Society Symposium Proceedings. 2003 ; 762[citado 2024 nov. 02 ]
Vancouver
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. Laser interference structuring of a-GeN for the production of optical diffraction gratings. Materials Research Society Symposium Proceedings. 2003 ; 762[citado 2024 nov. 02 ]
Trabalho de evento
A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation (2003)
Jacobsohn, L. G.; Zanatta, Antonio Ricardo ; Lee, J. K.; Cooke, D. W.; Bennett, B. L.; Wetteland, C. J.; Tesmer, J. R.; Nastasi, M.
Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Spring Meeting. Unidade: IFSC
Subjects: CRISTALOGRAFIA, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN, SILICONE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JACOBSOHN, L. G. et al. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. 2003, Anais.. Warrendale: Materials Research Society - MRS, 2003. . Acesso em: 02 nov. 2024.
APA
Jacobsohn, L. G., Zanatta, A. R., Lee, J. K., Cooke, D. W., Bennett, B. L., Wetteland, C. J., et al. (2003). A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. In Materials Research Society Symposium Proceedings (Vol. 777). Warrendale: Materials Research Society - MRS.
NLM
Jacobsohn LG, Zanatta AR, Lee JK, Cooke DW, Bennett BL, Wetteland CJ, Tesmer JR, Nastasi M. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. Materials Research Society Symposium Proceedings. 2003 ; 777[citado 2024 nov. 02 ]
Vancouver
Jacobsohn LG, Zanatta AR, Lee JK, Cooke DW, Bennett BL, Wetteland CJ, Tesmer JR, Nastasi M. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. Materials Research Society Symposium Proceedings. 2003 ; 777[citado 2024 nov. 02 ]
Trabalho de evento-resumo
H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys (2003)
Mulato, M.; Zanatta, Antonio Ricardo ; Toet, D.; Chambouleyron, I. E.
Source: Abstract Book and Final Program. Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors : Science and Technology - ICAMS. Unidades: FFCLRP, IFSC
Subjects: CRISTALIZAÇÃO, SEMICONDUTORES, LASER, CRISTALOGRAFIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MULATO, M. et al. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. 2003, Anais.. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, 2003. . Acesso em: 02 nov. 2024.
APA
Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2003). H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. In Abstract Book and Final Program. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo.
NLM
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2024 nov. 02 ]
Vancouver
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2024 nov. 02 ]

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