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Artigo de periodico
Gas-phase nucleophilic reactions in tetraalkoxysilanes (1995)
Silva, Maria Lucia Pereira da; Riveros, José Manuel
Fonte: Journal of Mass Spectrometry. Unidades: IQ, EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Maria Lucia Pereira da e RIVEROS, José Manuel. Gas-phase nucleophilic reactions in tetraalkoxysilanes. Journal of Mass Spectrometry, v. 30, p. 733-40, 1995Tradução . . Disponível em: https://doi.org/10.1002/jms.1190300512. Acesso em: 05 set. 2024.
APA
Silva, M. L. P. da, & Riveros, J. M. (1995). Gas-phase nucleophilic reactions in tetraalkoxysilanes. Journal of Mass Spectrometry, 30, 733-40. doi:10.1002/jms.1190300512
NLM
Silva MLP da, Riveros JM. Gas-phase nucleophilic reactions in tetraalkoxysilanes [Internet]. Journal of Mass Spectrometry. 1995 ;30 733-40.[citado 2024 set. 05 ] Available from: https://doi.org/10.1002/jms.1190300512
Vancouver
Silva MLP da, Riveros JM. Gas-phase nucleophilic reactions in tetraalkoxysilanes [Internet]. Journal of Mass Spectrometry. 1995 ;30 733-40.[citado 2024 set. 05 ] Available from: https://doi.org/10.1002/jms.1190300512
Artigo de periodico
New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k (1995)
Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio e SIMOEN, Eddy e CLAEYS, Cor. New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics, v. 38, n. 10, p. 1799-803, 1995Tradução . . Acesso em: 05 set. 2024.
APA
Martino, J. A., Simoen, E., & Claeys, C. (1995). New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics, 38( 10), 1799-803.
NLM
Martino JA, Simoen E, Claeys C. New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics. 1995 ;38( 10): 1799-803.[citado 2024 set. 05 ]
Vancouver
Martino JA, Simoen E, Claeys C. New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics. 1995 ;38( 10): 1799-803.[citado 2024 set. 05 ]
Artigo de periodico
Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics (1995)
Santos Filho, Sebastião Gomes dos ; Hasenack, Claus Martin; Lopes, M C V; Baranauskas, V
Fonte: Semiconductor Science and Technology. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS FILHO, Sebastião Gomes dos et al. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, v. 10, n. 7 , p. 990-6, 1995Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/10/7/015. Acesso em: 05 set. 2024.
APA
Santos Filho, S. G. dos, Hasenack, C. M., Lopes, M. C. V., & Baranauskas, V. (1995). Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, 10( 7 ), 990-6. doi:10.1088/0268-1242/10/7/015
NLM
Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2024 set. 05 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015
Vancouver
Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2024 set. 05 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015

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