Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires (2019)
Source: Nanotechnology. Unidade: FZEA
Subjects: SEMICONDUTORES, ÓPTICA ELETRÔNICA
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PITON, Marcelo Rizzo et al. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, p. 1-11, 2019Tradução . . Disponível em: https://doi.org/10.1088/1361-6528/ab1a97. Acesso em: 02 nov. 2024.APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Galeti, H. V. A., Rodrigues, A. de G., Talmila, S., et al. (2019). Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, 30( 33), 1-11. doi:10.1088/1361-6528/ab1a97NLM
Piton MR, Koivusalo E, Hakkarainen T, Galeti HVA, Rodrigues A de G, Talmila S, Souto SPA, Lupo D, Gobato YG, Guina M. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires [Internet]. Nanotechnology. 2019 ; 30( 33): 1-11.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1088/1361-6528/ab1a97Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Galeti HVA, Rodrigues A de G, Talmila S, Souto SPA, Lupo D, Gobato YG, Guina M. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires [Internet]. Nanotechnology. 2019 ; 30( 33): 1-11.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1088/1361-6528/ab1a97
