Source: IOP Conference Series: Materials Science and Engineering. Conference titles: International Conference on Solid Films and Surfaces - ICSFS. Unidade: IFSC
Subjects: FILMES FINOS, FOTÔNICA
ABNT
BUENO, C. F. et al. Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution. IOP Conference Series: Materials Science and Engineering. Bristol: Institute of Physics - IOP. Disponível em: https://doi.org/10.1088/1757-899X/76/1/012006. Acesso em: 05 nov. 2024. , 2015APA
Bueno, C. F., Scalvi, L. V. A., Saeki, M. J., & Siu Li, M. (2015). Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution. IOP Conference Series: Materials Science and Engineering. Bristol: Institute of Physics - IOP. doi:10.1088/1757-899X/76/1/012006NLM
Bueno CF, Scalvi LVA, Saeki MJ, Siu Li M. Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution [Internet]. IOP Conference Series: Materials Science and Engineering. 2015 ; 76 012006-1-012006-6.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1757-899X/76/1/012006Vancouver
Bueno CF, Scalvi LVA, Saeki MJ, Siu Li M. Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution [Internet]. IOP Conference Series: Materials Science and Engineering. 2015 ; 76 012006-1-012006-6.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1757-899X/76/1/012006