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Artigo de periodico
Bidimensional codes recorded on an oxide glass surface using a continuous wave C'O IND. 2' laser (2011)
Andreeta, Marcelo Rubens Barsi; Cunha, L. S.; Vales, L. F.; Caraschi, Luis Carlos; Jasinevicius, Renato Goulart
Source: Journal of Micromechanics and Microengineering. Unidades: IFSC, EESC
Subjects: LASER (APLICAÇÕES), VIDRO CERÂMICO, CÓDIGO DE BARRAS (DESENVOLVIMENTO)
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ABNT
ANDREETA, Marcelo Rubens Barsi et al. Bidimensional codes recorded on an oxide glass surface using a continuous wave C'O IND. 2' laser. Journal of Micromechanics and Microengineering, v. 21, n. 2, p. 025004-1-025004-5, 2011Tradução . . Disponível em: https://doi.org/10.1088/0960-1317/21/2/025004. Acesso em: 13 nov. 2024.
APA
Andreeta, M. R. B., Cunha, L. S., Vales, L. F., Caraschi, L. C., & Jasinevicius, R. G. (2011). Bidimensional codes recorded on an oxide glass surface using a continuous wave C'O IND. 2' laser. Journal of Micromechanics and Microengineering, 21( 2), 025004-1-025004-5. doi:10.1088/0960-1317/21/2/025004
NLM
Andreeta MRB, Cunha LS, Vales LF, Caraschi LC, Jasinevicius RG. Bidimensional codes recorded on an oxide glass surface using a continuous wave C'O IND. 2' laser [Internet]. Journal of Micromechanics and Microengineering. 2011 ; 21( 2): 025004-1-025004-5.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1088/0960-1317/21/2/025004
Vancouver
Andreeta MRB, Cunha LS, Vales LF, Caraschi LC, Jasinevicius RG. Bidimensional codes recorded on an oxide glass surface using a continuous wave C'O IND. 2' laser [Internet]. Journal of Micromechanics and Microengineering. 2011 ; 21( 2): 025004-1-025004-5.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1088/0960-1317/21/2/025004
Artigo de periodico
On the ductile response dependence upon phase transformation in diamond turning of semiconductors (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Physica Status Solidi B : basic research. Unidade: EESC
Subjects: SEMICONDUTORES, DIAMANTE, DUCTILIDADE, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, v. 244, n. Ja 2007, p. 261-265, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssb.200672554. Acesso em: 13 nov. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, 244( Ja 2007), 261-265. doi:10.1002/pssb.200672554
NLM
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1002/pssb.200672554
Vancouver
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1002/pssb.200672554
Artigo de periodico
Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidades: EESC, IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILICONE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Antonio Ricardo. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, v. 89, n. 3, p. 031917-1-031917-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2227644. Acesso em: 13 nov. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, A. R. (2006). Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, 89( 3), 031917-1-031917-3. doi:10.1063/1.2227644
NLM
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.2227644
Vancouver
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.2227644
Artigo de periodico
Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Ricardo Antonio
Source: Defect and Diffusion Forum. Unidades: EESC, IFSC
Subjects: SILICONE, ESPECTROSCOPIA RAMAN, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Ricardo Antonio. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, v. 258-260, p. 276-281, 2006Tradução . . Acesso em: 13 nov. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, R. A. (2006). Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, 258-260, 276-281.
NLM
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 nov. 13 ]
Vancouver
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 nov. 13 ]

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