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Artigo de periodico
Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures (2004)
Bellodi, Marcello; Martino, João Antonio
Fonte: Journal Integrated Circuits and Systems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, v. 1, n. 2, p. 31-35, 2004Tradução . . Disponível em: https://doi.org/10.29292/jics.v1i2.261. Acesso em: 19 out. 2024.
APA
Bellodi, M., & Martino, J. A. (2004). Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, 1( 2), 31-35. doi:10.29292/jics.v1i2.261
NLM
Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2024 out. 19 ] Available from: https://doi.org/10.29292/jics.v1i2.261
Vancouver
Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2024 out. 19 ] Available from: https://doi.org/10.29292/jics.v1i2.261
Artigo de periodico
Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures (2001)
Bellodi, Marcello; Martino, João Antonio
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures. Solid-State Electronics, v. 45, n. 5, p. 683-688, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(01)00099-5. Acesso em: 19 out. 2024.
APA
Bellodi, M., & Martino, J. A. (2001). Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures. Solid-State Electronics, 45( 5), 683-688. doi:10.1016/s0038-1101(01)00099-5
NLM
Bellodi M, Martino JA. Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures [Internet]. Solid-State Electronics. 2001 ; 45( 5): 683-688.[citado 2024 out. 19 ] Available from: https://doi.org/10.1016/s0038-1101(01)00099-5
Vancouver
Bellodi M, Martino JA. Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures [Internet]. Solid-State Electronics. 2001 ; 45( 5): 683-688.[citado 2024 out. 19 ] Available from: https://doi.org/10.1016/s0038-1101(01)00099-5
Artigo de periodico
Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures (1999)
Bellodi, Marcello; Martino, João Antonio
Fonte: Electrochemical and Solid State Letters. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, v. 2, n. 7, p. 345-346, 1999Tradução . . Disponível em: https://doi.org/10.1149/1.1390831. Acesso em: 19 out. 2024.
APA
Bellodi, M., & Martino, J. A. (1999). Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, 2( 7), 345-346. doi:10.1149/1.1390831
NLM
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2024 out. 19 ] Available from: https://doi.org/10.1149/1.1390831
Vancouver
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2024 out. 19 ] Available from: https://doi.org/10.1149/1.1390831

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