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Artigo de periodico
Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN (2021)
Lima, Matheus P. ; Besse, Rafael ; Silva, Juarez Lopes Ferreira da
Fonte: Journal of Physics: Condensed Matter. Unidades: IQSC, IFSC
Assuntos: FÍSICO-QUÍMICA, NANOPARTÍCULAS
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ABNT
LIMA, Matheus P. e BESSE, Rafael e SILVA, Juarez Lopes Ferreira da. Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN. Journal of Physics: Condensed Matter, v. 33, n. Ja 2021, p. 025003-1 -025003-7, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-648X/abac8d. Acesso em: 05 nov. 2024.
APA
Lima, M. P., Besse, R., & Silva, J. L. F. da. (2021). Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN. Journal of Physics: Condensed Matter, 33( Ja 2021), 025003-1 -025003-7. doi:10.1088/1361-648X/abac8d
NLM
Lima MP, Besse R, Silva JLF da. Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN [Internet]. Journal of Physics: Condensed Matter. 2021 ; 33( Ja 2021): 025003-1 -025003-7.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1361-648X/abac8d
Vancouver
Lima MP, Besse R, Silva JLF da. Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN [Internet]. Journal of Physics: Condensed Matter. 2021 ; 33( Ja 2021): 025003-1 -025003-7.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1361-648X/abac8d
Artigo de periodico
Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures (2021)
Silveira, Julian Francisco Rama Vieira ; Besse, Rafael ; Silva, Juarez Lopes Ferreira da
Fonte: ACS Applied Electronic Materials. Unidades: IQSC, IFSC
Assuntos: METAIS, ELETRÔNICA QUÂNTICA
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ABNT
SILVEIRA, Julian Francisco Rama Vieira e BESSE, Rafael e SILVA, Juarez Lopes Ferreira da. Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures. ACS Applied Electronic Materials, v. 3, n. 4, p. 1671-1680, 2021Tradução . . Disponível em: https://doi.org/10.1021/acsaelm.1c00009. Acesso em: 05 nov. 2024.
APA
Silveira, J. F. R. V., Besse, R., & Silva, J. L. F. da. (2021). Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures. ACS Applied Electronic Materials, 3( 4), 1671-1680. doi:10.1021/acsaelm.1c00009
NLM
Silveira JFRV, Besse R, Silva JLF da. Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures [Internet]. ACS Applied Electronic Materials. 2021 ; 3( 4): 1671-1680.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1021/acsaelm.1c00009
Vancouver
Silveira JFRV, Besse R, Silva JLF da. Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures [Internet]. ACS Applied Electronic Materials. 2021 ; 3( 4): 1671-1680.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1021/acsaelm.1c00009
Artigo de periodico
The role of the A-cations in the polymorphic stability and optoelectronic properties of lead-free ASnI3 perovskites (2021)
Ozório, Mailde da Silva ; Malladi, Srikanth ; Besse, Rafael ; Silva, Juarez Lopes Ferreira da
Fonte: Physical Chemistry Chemical Physics. Unidades: IQSC, IFSC
Assuntos: PROPRIEDADES DOS MATERIAIS, CÉLULAS SOLARES
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ABNT
OZÓRIO, Mailde da Silva et al. The role of the A-cations in the polymorphic stability and optoelectronic properties of lead-free ASnI3 perovskites. Physical Chemistry Chemical Physics, v. 23, n. 3, p. 2286-2297, 2021Tradução . . Disponível em: https://doi.org/10.1039/D0CP06090A. Acesso em: 05 nov. 2024.
APA
Ozório, M. da S., Malladi, S., Besse, R., & Silva, J. L. F. da. (2021). The role of the A-cations in the polymorphic stability and optoelectronic properties of lead-free ASnI3 perovskites. Physical Chemistry Chemical Physics, 23( 3), 2286-2297. doi:10.1039/D0CP06090A
NLM
Ozório M da S, Malladi S, Besse R, Silva JLF da. The role of the A-cations in the polymorphic stability and optoelectronic properties of lead-free ASnI3 perovskites [Internet]. Physical Chemistry Chemical Physics. 2021 ; 23( 3): 2286-2297.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1039/D0CP06090A
Vancouver
Ozório M da S, Malladi S, Besse R, Silva JLF da. The role of the A-cations in the polymorphic stability and optoelectronic properties of lead-free ASnI3 perovskites [Internet]. Physical Chemistry Chemical Physics. 2021 ; 23( 3): 2286-2297.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1039/D0CP06090A
Artigo de periodico
First-principles insights into the role of edges in the binding mechanisms of Au4 clusters on MoSe2 nanoflakes (2021)
Caturello, Naidel Antonio Moreira dos Santos ; Besse, Rafael ; Silveira, Julian Francisco Rama Vieira ; Lima, Matheus P ; Silva, Juarez Lopes Ferreira da
Fonte: Physica E: low-dimensional systems and nanostructures. Unidades: IQSC, FFCLRP, IFSC
Assuntos: OURO, CLUSTERS
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ABNT
CATURELLO, Naidel Antonio Moreira dos Santos et al. First-principles insights into the role of edges in the binding mechanisms of Au4 clusters on MoSe2 nanoflakes. Physica E: low-dimensional systems and nanostructures, v. 126, p. 114472-1-114472-9, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2020.114472. Acesso em: 05 nov. 2024.
APA
Caturello, N. A. M. dos S., Besse, R., Silveira, J. F. R. V., Lima, M. P., & Silva, J. L. F. da. (2021). First-principles insights into the role of edges in the binding mechanisms of Au4 clusters on MoSe2 nanoflakes. Physica E: low-dimensional systems and nanostructures, 126, 114472-1-114472-9. doi:10.1016/j.physe.2020.114472
NLM
Caturello NAM dos S, Besse R, Silveira JFRV, Lima MP, Silva JLF da. First-principles insights into the role of edges in the binding mechanisms of Au4 clusters on MoSe2 nanoflakes [Internet]. Physica E: low-dimensional systems and nanostructures. 2021 ; 126 114472-1-114472-9.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/j.physe.2020.114472
Vancouver
Caturello NAM dos S, Besse R, Silveira JFRV, Lima MP, Silva JLF da. First-principles insights into the role of edges in the binding mechanisms of Au4 clusters on MoSe2 nanoflakes [Internet]. Physica E: low-dimensional systems and nanostructures. 2021 ; 126 114472-1-114472-9.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/j.physe.2020.114472
Artigo de periodico
First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures (2019)
Besse, Rafael ; Lima, Matheus P. ; Silva, Juarez Lopes Ferreira da
Fonte: ACS Applied Energy Materials. Unidades: IQSC, IFSC
Assuntos: SEMICONDUTORES, CALCOGÊNIOS
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ABNT
BESSE, Rafael e LIMA, Matheus P. e SILVA, Juarez Lopes Ferreira da. First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures. ACS Applied Energy Materials, v. 2, n. 12, p. 8491-8501, 2019Tradução . . Disponível em: https://doi.org/10.1021/acsaem.9b01433. Acesso em: 05 nov. 2024.
APA
Besse, R., Lima, M. P., & Silva, J. L. F. da. (2019). First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures. ACS Applied Energy Materials, 2( 12), 8491-8501. doi:10.1021/acsaem.9b01433
NLM
Besse R, Lima MP, Silva JLF da. First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures [Internet]. ACS Applied Energy Materials. 2019 ; 2( 12): 8491-8501.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1021/acsaem.9b01433
Vancouver
Besse R, Lima MP, Silva JLF da. First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures [Internet]. ACS Applied Energy Materials. 2019 ; 2( 12): 8491-8501.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1021/acsaem.9b01433
Artigo de periodico
Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: design principles from an ab initio investigation (2019)
Silva, Augusto Cesar Huppes da ; Caturello, Naidel A. M. S ; Besse, Rafael ; Lima, Matheus P ; Silva, Juarez Lopes Ferreira da
Fonte: Physical Chemistry Chemical Physics. Unidades: IQSC, IFSC
Assuntos: FÍSICO-QUÍMICA, NANOPARTÍCULAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Augusto Cesar Huppes da et al. Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: design principles from an ab initio investigation. Physical Chemistry Chemical Physics, v. 21, p. 23076-23084, 2019Tradução . . Disponível em: https://doi.org/10.1039/C9CP03698A. Acesso em: 05 nov. 2024.
APA
Silva, A. C. H. da, Caturello, N. A. M. S., Besse, R., Lima, M. P., & Silva, J. L. F. da. (2019). Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: design principles from an ab initio investigation. Physical Chemistry Chemical Physics, 21, 23076-23084. doi:10.1039/C9CP03698A
NLM
Silva ACH da, Caturello NAMS, Besse R, Lima MP, Silva JLF da. Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: design principles from an ab initio investigation [Internet]. Physical Chemistry Chemical Physics. 2019 ; 21 23076-23084.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1039/C9CP03698A
Vancouver
Silva ACH da, Caturello NAMS, Besse R, Lima MP, Silva JLF da. Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: design principles from an ab initio investigation [Internet]. Physical Chemistry Chemical Physics. 2019 ; 21 23076-23084.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1039/C9CP03698A

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