Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures (2021)
- Authors:
- USP affiliated authors: SILVA, JUAREZ LOPES FERREIRA DA - IQSC ; SILVEIRA, JULIAN FRANCISCO RAMA VIEIRA - IQSC ; BESSE, RAFAEL - IFSC
- Unidades: IQSC; IFSC
- DOI: 10.1021/acsaelm.1c00009
- Subjects: METAIS; ELETRÔNICA QUÂNTICA
- Keywords: graphene; stacking order; vdW heterostructures; electronic and optical properties; pressure tunning
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Washington, DC
- Date published: 2021
- Source:
- Título do periódico: ACS Applied Electronic Materials
- ISSN: 2637-6113
- Volume/Número/Paginação/Ano: v. 3, n. 4, p. 1671-1680, Apr. 2021
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SILVEIRA, Julian Francisco Rama Vieira e BESSE, Rafael e SILVA, Juarez Lopes Ferreira da. Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures. ACS Applied Electronic Materials, v. 3, n. 4, p. 1671-1680, 2021Tradução . . Disponível em: https://doi.org/10.1021/acsaelm.1c00009. Acesso em: 19 abr. 2024. -
APA
Silveira, J. F. R. V., Besse, R., & Silva, J. L. F. da. (2021). Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures. ACS Applied Electronic Materials, 3( 4), 1671-1680. doi:10.1021/acsaelm.1c00009 -
NLM
Silveira JFRV, Besse R, Silva JLF da. Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures [Internet]. ACS Applied Electronic Materials. 2021 ; 3( 4): 1671-1680.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1021/acsaelm.1c00009 -
Vancouver
Silveira JFRV, Besse R, Silva JLF da. Stacking order effects on the electronic and optical properties of graphene/transition metal dichalcogenide Van der Waals heterostructures [Internet]. ACS Applied Electronic Materials. 2021 ; 3( 4): 1671-1680.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1021/acsaelm.1c00009 - Beyond the Anderson rule: importance of interfacial dipole and hybridization in van der Waals heterostructures
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- Design of multilayered vertical van der Waals heterostructures based on graphene and transition metal dichalcogenides for photovoltaic applications
- Vertical heterostructures built from graphene and transition metal dichalcogenides for photovoltaic applications
- First-principles insights into the role of edges in the binding mechanisms of Au4 clusters on MoSe2 nanoflakes
- First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures
- Prediction of Effective Photoelectron and Hole Separation in Type‑I MoS2/PtSe2 van der Waals Junction
- Mixed Halide Lead-free Double Perovskite Alloys for Band Gap Engineering
- Improving the Stability and Efficiency of Perovskite Solar Cells by a Bidentate Anilinium Salt
- Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN
Informações sobre o DOI: 10.1021/acsaelm.1c00009 (Fonte: oaDOI API)
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