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  • Artigo de periodico

    Theoretical investigation of stacked two-dimensional transition-metal dichalcogenide materials: The role of chemical species and number of monolayers (2025)

    Bracht, Jean M.; Querne, Mateus B. P.; Silva, Juarez Lopes Ferreira da ; Lima, Matheus P

    Source: ACS Omega. Unidade: IQSC

    Subjects: TRELIÇAS, MATERIAIS

    Versão PublicadaAcesso à fonteDOIHow to cite
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    • ABNT

      BRACHT, Jean M. et al. Theoretical investigation of stacked two-dimensional transition-metal dichalcogenide materials: The role of chemical species and number of monolayers. ACS Omega, v. 10, p. 8922−8934, 2025Tradução . . Disponível em: https://doi.org/10.1021/acsomega.4c05423. Acesso em: 04 jan. 2026.

    • APA

      Bracht, J. M., Querne, M. B. P., Silva, J. L. F. da, & Lima, M. P. (2025). Theoretical investigation of stacked two-dimensional transition-metal dichalcogenide materials: The role of chemical species and number of monolayers. ACS Omega, 10, 8922−8934. doi:10.1021/acsomega.4c05423

    • NLM

      Bracht JM, Querne MBP, Silva JLF da, Lima MP. Theoretical investigation of stacked two-dimensional transition-metal dichalcogenide materials: The role of chemical species and number of monolayers [Internet]. ACS Omega. 2025 ;10 8922−8934.[citado 2026 jan. 04 ] Available from: https://doi.org/10.1021/acsomega.4c05423

    • Vancouver

      Bracht JM, Querne MBP, Silva JLF da, Lima MP. Theoretical investigation of stacked two-dimensional transition-metal dichalcogenide materials: The role of chemical species and number of monolayers [Internet]. ACS Omega. 2025 ;10 8922−8934.[citado 2026 jan. 04 ] Available from: https://doi.org/10.1021/acsomega.4c05423

  • Artigo de periodico

    Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures (2024)

    Querne, Mateus B. P.; Dias, Alexandre C.; Janotti, Anderson; Silva, Juarez Lopes Ferreira da ; Lima, Matheus P.

    Source: The Journal of Physical Chemistry Part C. Unidade: IQSC

    Subjects: ESTRUTURA QUÍMICA, CONDUTIVIDADE ELÉTRICA, MATERIAIS

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    • ABNT

      QUERNE, Mateus B. P. et al. Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures. The Journal of Physical Chemistry Part C, v. 128, p. 12164−12177, 2024Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.4c01813. Acesso em: 04 jan. 2026.

    • APA

      Querne, M. B. P., Dias, A. C., Janotti, A., Silva, J. L. F. da, & Lima, M. P. (2024). Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures. The Journal of Physical Chemistry Part C, 128, 12164−12177. doi:10.1021/acs.jpcc.4c01813

    • NLM

      Querne MBP, Dias AC, Janotti A, Silva JLF da, Lima MP. Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures [Internet]. The Journal of Physical Chemistry Part C. 2024 ;128 12164−12177.[citado 2026 jan. 04 ] Available from: https://doi.org/10.1021/acs.jpcc.4c01813

    • Vancouver

      Querne MBP, Dias AC, Janotti A, Silva JLF da, Lima MP. Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures [Internet]. The Journal of Physical Chemistry Part C. 2024 ;128 12164−12177.[citado 2026 jan. 04 ] Available from: https://doi.org/10.1021/acs.jpcc.4c01813

  • Artigo de periodico

    Stability and accuracy control of k . p parameters (2016)

    Bastos, Carlos M. O.; Sabino, Fernando P.; Faria Junior, Paulo E.; Campos, Tiago; Silva, Juarez Lopes Ferreira da ; Sipahi, Guilherme Matos

    Source: Semiconductor Science and Technology. Unidades: IQSC, IFSC

    Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, SPIN, SISTEMAS HAMILTONIANOS

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    • ABNT

      BASTOS, Carlos M. O. et al. Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, v. 31, n. 10, p. 105002-1-105002-10, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/10/105002. Acesso em: 04 jan. 2026.

    • APA

      Bastos, C. M. O., Sabino, F. P., Faria Junior, P. E., Campos, T., Silva, J. L. F. da, & Sipahi, G. M. (2016). Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, 31( 10), 105002-1-105002-10. doi:10.1088/0268-1242/31/10/105002

    • NLM

      Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2026 jan. 04 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002

    • Vancouver

      Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2026 jan. 04 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002
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