Internal strain distribution in freestanding porous silicon (2009)
Source: Journal of the Eletrochemical Society. Unidade: IFSC
Subjects: FILMES FINOS, SILICIO (PROPRIEDADES), ELETROQUÍMICA, NANOTECNOLOGIA
ABNT
PUSEP, Yuri A. et al. Internal strain distribution in freestanding porous silicon. Journal of the Eletrochemical Society, v. 156, n. 12, p. K215-K217, 2009Tradução . . Disponível em: https://doi.org/10.1149/1.3225832. Acesso em: 10 set. 2024.APA
Pusep, Y. A., Rodrigues, A. D., Galzerani, J. C., Arce, R. D., Koropecki, R. R., & Comedi, D. (2009). Internal strain distribution in freestanding porous silicon. Journal of the Eletrochemical Society, 156( 12), K215-K217. doi:10.1149/1.3225832NLM
Pusep YA, Rodrigues AD, Galzerani JC, Arce RD, Koropecki RR, Comedi D. Internal strain distribution in freestanding porous silicon [Internet]. Journal of the Eletrochemical Society. 2009 ; 156( 12): K215-K217.[citado 2024 set. 10 ] Available from: https://doi.org/10.1149/1.3225832Vancouver
Pusep YA, Rodrigues AD, Galzerani JC, Arce RD, Koropecki RR, Comedi D. Internal strain distribution in freestanding porous silicon [Internet]. Journal of the Eletrochemical Society. 2009 ; 156( 12): K215-K217.[citado 2024 set. 10 ] Available from: https://doi.org/10.1149/1.3225832