Reactive ion etching and plasma etching of tungsten (1993)
Fonte: Microelectronic Engineering. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
VERDONCK, Patrick Bernard e BRASSEUR, G. e SWART, J. Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, v. 21, p. 329-332, 1993Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(93)90084-i. Acesso em: 08 jul. 2024.APA
Verdonck, P. B., Brasseur, G., & Swart, J. (1993). Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, 21, 329-332. doi:10.1016/0167-9317(93)90084-iNLM
Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-iVancouver
Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i
