Source: Physica Status Solidi B. Unidades: IF, IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
RODRIGUES, Sara C P et al. K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices. Physica Status Solidi B, v. 234, n. 3, p. 906-910, 2002Tradução . . Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdf. Acesso em: 09 ago. 2024.APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Sipahi, G. M., Noriega, O. C., & Leite, J. R. (2002). K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices. Physica Status Solidi B, 234( 3), 906-910. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdfNLM
Rodrigues SCP, Scolfaro LMR, Sipahi GM, Noriega OC, Leite JR. K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices [Internet]. Physica Status Solidi B. 2002 ; 234( 3): 906-910.[citado 2024 ago. 09 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdfVancouver
Rodrigues SCP, Scolfaro LMR, Sipahi GM, Noriega OC, Leite JR. K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices [Internet]. Physica Status Solidi B. 2002 ; 234( 3): 906-910.[citado 2024 ago. 09 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=101521325&PLACEBO=IE.pdf