Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si (2017)
Source: Abstracts. Conference titles: Optics & Photonics Days. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN, SEMICONDUTORES (FÍSICO-QUÍMICA)
ABNT
PITON, Marcelo Rizzo et al. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. 2017, Anais.. Oulu: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2017. . Acesso em: 21 ago. 2024.APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Suomalainen, S., Galeti, H. V. A., Souto, S. P. A., et al. (2017). Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. In Abstracts. Oulu: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo.NLM
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Galeti HVA, Souto SPA, Gobato YG, Guina M. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. Abstracts. 2017 ;[citado 2024 ago. 21 ]Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Galeti HVA, Souto SPA, Gobato YG, Guina M. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. Abstracts. 2017 ;[citado 2024 ago. 21 ]