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Artigo de periodico
Luminescence from miniband states in heavily doped superlattices (2004)
Oliveira, R F; Henriques, André Bohomoletz; Lamas, T E; Quivy, A. A.; Pires, M P; Souza, P L; Yavich, B; Abramof, E
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, LUMINESCÊNCIA, SEMICONDUTORES
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ABNT
OLIVEIRA, R F et al. Luminescence from miniband states in heavily doped superlattices. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400032. Acesso em: 01 jul. 2024.
APA
Oliveira, R. F., Henriques, A. B., Lamas, T. E., Quivy, A. A., Pires, M. P., Souza, P. L., et al. (2004). Luminescence from miniband states in heavily doped superlattices. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400032
NLM
Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Pires MP, Souza PL, Yavich B, Abramof E. Luminescence from miniband states in heavily doped superlattices [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jul. 01 ] Available from: https://doi.org/10.1590/s0103-97332004000400032
Vancouver
Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Pires MP, Souza PL, Yavich B, Abramof E. Luminescence from miniband states in heavily doped superlattices [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jul. 01 ] Available from: https://doi.org/10.1590/s0103-97332004000400032
Artigo de periodico
Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy (2003)
Hanamoto, L K; Farias, C. M. A.; Henriques, André Bohomoletz; Tribuzy, C V B; Saouza, P L; Yavich, B
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HANAMOTO, L K et al. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 93, n. 9, p. 5460-5464, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1566477. Acesso em: 01 jul. 2024.
APA
Hanamoto, L. K., Farias, C. M. A., Henriques, A. B., Tribuzy, C. V. B., Saouza, P. L., & Yavich, B. (2003). Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 93( 9), 5460-5464. doi:10.1063/1.1566477
NLM
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.1566477
Vancouver
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.1566477
Artigo de periodico
Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices (2002)
Hanamoto, L K; Henriques, André Bohomoletz; Tribuzy, C V B; Souza, P L; Yavich, B; Abramof, E
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HANAMOTO, L K et al. Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices. Brazilian Journal of Physics, v. 32, n. 2A, p. 334-337, 2002Tradução . . Disponível em: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf. Acesso em: 01 jul. 2024.
APA
Hanamoto, L. K., Henriques, A. B., Tribuzy, C. V. B., Souza, P. L., Yavich, B., & Abramof, E. (2002). Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices. Brazilian Journal of Physics, 32( 2A), 334-337. Recuperado de http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf
NLM
Hanamoto LK, Henriques AB, Tribuzy CVB, Souza PL, Yavich B, Abramof E. Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 334-337.[citado 2024 jul. 01 ] Available from: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf
Vancouver
Hanamoto LK, Henriques AB, Tribuzy CVB, Souza PL, Yavich B, Abramof E. Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 334-337.[citado 2024 jul. 01 ] Available from: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf
Artigo de periodico
Electronic scattering in doped superlattices (2001)
Henriques, André Bohomoletz; Souza, P. L.; Yavich, B
Source: Physical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz e SOUZA, P. L. e YAVICH, B. Electronic scattering in doped superlattices. Physical Review B, v. 64, n. 4, p. 5319/1-5319/6, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips. Acesso em: 01 jul. 2024.
APA
Henriques, A. B., Souza, P. L., & Yavich, B. (2001). Electronic scattering in doped superlattices. Physical Review B, 64( 4), 5319/1-5319/6. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips
NLM
Henriques AB, Souza PL, Yavich B. Electronic scattering in doped superlattices [Internet]. Physical Review B. 2001 ; 64( 4): 5319/1-5319/6.[citado 2024 jul. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips
Vancouver
Henriques AB, Souza PL, Yavich B. Electronic scattering in doped superlattices [Internet]. Physical Review B. 2001 ; 64( 4): 5319/1-5319/6.[citado 2024 jul. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips
Artigo de periodico
Anisotropy of the cyclotron mass in superlattices containing two populated minibands (2001)
Henriques, André Bohomoletz; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz e SOUZA, P. L. e YAVICH, B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands. Semiconductor Science and Technology, v. 16, n. 1, p. 1-6, 2001Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/16/1/301. Acesso em: 01 jul. 2024.
APA
Henriques, A. B., Souza, P. L., & Yavich, B. (2001). Anisotropy of the cyclotron mass in superlattices containing two populated minibands. Semiconductor Science and Technology, 16( 1), 1-6. doi:10.1088/0268-1242/16/1/301
NLM
Henriques AB, Souza PL, Yavich B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands [Internet]. Semiconductor Science and Technology. 2001 ; 16( 1): 1-6.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1088/0268-1242/16/1/301
Vancouver
Henriques AB, Souza PL, Yavich B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands [Internet]. Semiconductor Science and Technology. 2001 ; 16( 1): 1-6.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1088/0268-1242/16/1/301

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