Source: Journal of Luminescence. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS, TERRAS RARAS
ABNT
RIVERA, V. A. G. et al. High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si (1 1 1) by electron beam evaporation. Journal of Luminescence, v. 148, p. 186-191, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2013.12.022. Acesso em: 20 ago. 2024.APA
Rivera, V. A. G., Ferri, F. A., Clabel, H. J. L., Silva, M. de A. P. da, Nunes, L. A. de O., Siu Li, M., & Marega Júnior, E. (2014). High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si (1 1 1) by electron beam evaporation. Journal of Luminescence, 148, 186-191. doi:10.1016/j.jlumin.2013.12.022NLM
Rivera VAG, Ferri FA, Clabel HJL, Silva M de AP da, Nunes LA de O, Siu Li M, Marega Júnior E. High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si (1 1 1) by electron beam evaporation [Internet]. Journal of Luminescence. 2014 ; 148 186-191.[citado 2024 ago. 20 ] Available from: https://doi.org/10.1016/j.jlumin.2013.12.022Vancouver
Rivera VAG, Ferri FA, Clabel HJL, Silva M de AP da, Nunes LA de O, Siu Li M, Marega Júnior E. High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si (1 1 1) by electron beam evaporation [Internet]. Journal of Luminescence. 2014 ; 148 186-191.[citado 2024 ago. 20 ] Available from: https://doi.org/10.1016/j.jlumin.2013.12.022