Almalki, Abdulaziz; Madani, Labed; Sengouga, Nouredine; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Chauhan, Jasbinder S.; Henini, Mohamed; Galeti, Helder Vinícius Avanço 
; Gobato, Yara Galvão ; Godoy, Marcio Peron Franco de; Andrade, Marcelo Barbosa de ; Souto, Sérgio Paulo Amaral ; Zhou, Hong; Wang, Boyan; Xiao, Ming; Qin, Yuan; Zhang, Yuhao
Source: Materials Today Electronics. Unidade: IFSC
Subjects: GÁLIO, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALMALKI, Abdulaziz et al. Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes. Materials Today Electronics, v. 4, p. 100042-1-100042-12 + supplementary materials, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.mtelec.2023.100042. Acesso em: 14 nov. 2024.APA
Almalki, A., Madani, L., Sengouga, N., Alhassan, S., Alotaibi, S., Alhassni, A., et al. (2023). Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes. Materials Today Electronics, 4, 100042-1-100042-12 + supplementary materials. doi:10.1016/j.mtelec.2023.100042NLM
Almalki A, Madani L, Sengouga N, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Chauhan JS, Henini M, Galeti HVA, Gobato YG, Godoy MPF de, Andrade MB de, Souto SPA, Zhou H, Wang B, Xiao M, Qin Y, Zhang Y. Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes [Internet]. Materials Today Electronics. 2023 ; 4 100042-1-100042-12 + supplementary materials.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1016/j.mtelec.2023.100042Vancouver
Almalki A, Madani L, Sengouga N, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Chauhan JS, Henini M, Galeti HVA, Gobato YG, Godoy MPF de, Andrade MB de, Souto SPA, Zhou H, Wang B, Xiao M, Qin Y, Zhang Y. Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes [Internet]. Materials Today Electronics. 2023 ; 4 100042-1-100042-12 + supplementary materials.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1016/j.mtelec.2023.100042
