Photoreflectance characterization of 'gama'-doped p-GaAs (1990)
Fonte: Proceedings of SPIE. Nome do evento: International Conference of Modulation Spectroscopy. Unidade: IFQSC
Assunto: FÍSICA
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ABNT
BERNUSSI, Ayrton A. et al. Photoreflectance characterization of 'gama'-doped p-GaAs. Proceedings of SPIE. Bellingham: International Society for Optical Engineering - SPIE. Disponível em: https://doi.org/10.1117/12.20864. Acesso em: 07 set. 2024. , 1990APA
Bernussi, A. A., Iikawa, F., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Photoreflectance characterization of 'gama'-doped p-GaAs. Proceedings of SPIE. Bellingham: International Society for Optical Engineering - SPIE. doi:10.1117/12.20864NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance characterization of 'gama'-doped p-GaAs [Internet]. Proceedings of SPIE. 1990 ; 1286 348-358.[citado 2024 set. 07 ] Available from: https://doi.org/10.1117/12.20864Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance characterization of 'gama'-doped p-GaAs [Internet]. Proceedings of SPIE. 1990 ; 1286 348-358.[citado 2024 set. 07 ] Available from: https://doi.org/10.1117/12.20864
