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Artigo de periodico
Structural investigation of the quasi-one-dimensional topological insulator Bi4I4 (2024)
Machuca, Cristhian David Hinostroza Vargas ; Faria, Leandro Rodrigues de ; Cassemiro, Gustavo Henrique ; Jimenez, Julio Antonio Larrea ; Machado, Antonio Jefferson da Silva ; Brito, Walber Hugo de ; Martelli, Valentina
Source: Physical Review B. Unidades: IF, EEL
Subjects: ALTA TEMPERATURA, BAIXA TEMPERATURA, BISMUTO
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ABNT
MACHUCA, Cristhian David Hinostroza Vargas et al. Structural investigation of the quasi-one-dimensional topological insulator Bi4I4. Physical Review B, v. 109, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.174105. Acesso em: 09 nov. 2024.
APA
Machuca, C. D. H. V., Faria, L. R. de, Cassemiro, G. H., Jimenez, J. A. L., Machado, A. J. da S., Brito, W. H. de, & Martelli, V. (2024). Structural investigation of the quasi-one-dimensional topological insulator Bi4I4. Physical Review B, 109. doi:10.1103/PhysRevB.109.174105
NLM
Machuca CDHV, Faria LR de, Cassemiro GH, Jimenez JAL, Machado AJ da S, Brito WH de, Martelli V. Structural investigation of the quasi-one-dimensional topological insulator Bi4I4 [Internet]. Physical Review B. 2024 ; 109[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.174105
Vancouver
Machuca CDHV, Faria LR de, Cassemiro GH, Jimenez JAL, Machado AJ da S, Brito WH de, Martelli V. Structural investigation of the quasi-one-dimensional topological insulator Bi4I4 [Internet]. Physical Review B. 2024 ; 109[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.174105
Artigo de periodico
Inelastic neutron scattering investigation of the crystal field excitations of 'ND''CO' IND. 5' (2023)
Passos, Fernando de Almeida ; Nilsen, G. J.; Patrick, C. E.; Le, M. D.; Balakrishnan, G.; Kumar, Santosh; Thamizhavel, A.; Cornejo, Daniel Reinaldo ; Jimenez, Julio Antonio Larrea
Source: Physical Review B. Unidade: IF
Subjects: NÊUTRONS, ESPALHAMENTO
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ABNT
PASSOS, Fernando de Almeida et al. Inelastic neutron scattering investigation of the crystal field excitations of 'ND''CO' IND. 5'. Physical Review B, v. 108, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.108.174409. Acesso em: 09 nov. 2024.
APA
Passos, F. de A., Nilsen, G. J., Patrick, C. E., Le, M. D., Balakrishnan, G., Kumar, S., et al. (2023). Inelastic neutron scattering investigation of the crystal field excitations of 'ND''CO' IND. 5'. Physical Review B, 108. doi:10.1103/PhysRevB.108.174409
NLM
Passos F de A, Nilsen GJ, Patrick CE, Le MD, Balakrishnan G, Kumar S, Thamizhavel A, Cornejo DR, Jimenez JAL. Inelastic neutron scattering investigation of the crystal field excitations of 'ND''CO' IND. 5' [Internet]. Physical Review B. 2023 ; 108[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevB.108.174409
Vancouver
Passos F de A, Nilsen GJ, Patrick CE, Le MD, Balakrishnan G, Kumar S, Thamizhavel A, Cornejo DR, Jimenez JAL. Inelastic neutron scattering investigation of the crystal field excitations of 'ND''CO' IND. 5' [Internet]. Physical Review B. 2023 ; 108[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevB.108.174409
Artigo de periodico
Thermal diffusivity and its lower bound in orthorhombic SnSe (2021)
Martelli, Valentina ; Abud, Fábio Santos Alves ; Jimenez, Julio Antonio Larrea ; Baggio-Saitovitch, Elisa ; Zhao, Li-Dong; Behnia, Kamran
Source: Physical Review B. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, TERMOELETRICIDADE, CONDUTIVIDADE TÉRMICA, CRISTALOGRAFIA, SELÊNIO, ESTANHO
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MARTELLI, Valentina et al. Thermal diffusivity and its lower bound in orthorhombic SnSe. Physical Review B, v. 104, n. 3, p. 07 , 2021Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.104.035208. Acesso em: 09 nov. 2024.
APA
Martelli, V., Abud, F. S. A., Jimenez, J. A. L., Baggio-Saitovitch, E., Zhao, L. -D., & Behnia, K. (2021). Thermal diffusivity and its lower bound in orthorhombic SnSe. Physical Review B, 104( 3), 07 . doi:10.1103/PhysRevB.104.035208
NLM
Martelli V, Abud FSA, Jimenez JAL, Baggio-Saitovitch E, Zhao L-D, Behnia K. Thermal diffusivity and its lower bound in orthorhombic SnSe [Internet]. Physical Review B. 2021 ; 104( 3): 07 .[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevB.104.035208
Vancouver
Martelli V, Abud FSA, Jimenez JAL, Baggio-Saitovitch E, Zhao L-D, Behnia K. Thermal diffusivity and its lower bound in orthorhombic SnSe [Internet]. Physical Review B. 2021 ; 104( 3): 07 .[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevB.104.035208
Artigo de periodico
Nonlinear waves in a quark gluon plasma (2010)
Fogaça, D. A; Ferreira Filho, L G; Navarra, Fernando Silveira
Source: Physical Review B. Unidade: IF
Assunto: ÍONS PESADOS
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FOGAÇA, D. A e FERREIRA FILHO, L G e NAVARRA, Fernando Silveira. Nonlinear waves in a quark gluon plasma. Physical Review B, v. 81, n. 5, p. 055211/1-055211/9, 2010Tradução . . Disponível em: https://doi.org/10.1103/physrevc.81.055211. Acesso em: 09 nov. 2024.
APA
Fogaça, D. A., Ferreira Filho, L. G., & Navarra, F. S. (2010). Nonlinear waves in a quark gluon plasma. Physical Review B, 81( 5), 055211/1-055211/9. doi:10.1103/physrevc.81.055211
NLM
Fogaça DA, Ferreira Filho LG, Navarra FS. Nonlinear waves in a quark gluon plasma [Internet]. Physical Review B. 2010 ; 81( 5): 055211/1-055211/9.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevc.81.055211
Vancouver
Fogaça DA, Ferreira Filho LG, Navarra FS. Nonlinear waves in a quark gluon plasma [Internet]. Physical Review B. 2010 ; 81( 5): 055211/1-055211/9.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevc.81.055211
Artigo de periodico
Classical and quantum magnetoresistance in a two-subband electron system (2009)
Mammani, Niko Churata; Gusev, Guennadii Michailovich; Silva, Euzi Conceicao Fernandes da; Raichev, O E; Quivy, A. A.; Bakarov, A K
Source: Physical Review B. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
MAMMANI, Niko Churata et al. Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, v. 80, n. 7, p. 085304-1/085304-5, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal. Acesso em: 09 nov. 2024.
APA
Mammani, N. C., Gusev, G. M., Silva, E. C. F. da, Raichev, O. E., Quivy, A. A., & Bakarov, A. K. (2009). Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, 80( 7), 085304-1/085304-5. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
NLM
Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2024 nov. 09 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
Vancouver
Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2024 nov. 09 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
Artigo de periodico
Landau-level crossing in two-subband systems in a tilted magnetic field (2007)
Duarte, C A; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: Physical Review B. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO HALL
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ABNT
DUARTE, C A et al. Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, v. 76, n. 7, p. 075346/1-075346/8, 2007Tradução . . Disponível em: https://doi.org/10.1103/physrevb.76.075346. Acesso em: 09 nov. 2024.
APA
Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2007). Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, 76( 7), 075346/1-075346/8. doi:10.1103/physrevb.76.075346
NLM
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.76.075346
Vancouver
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.76.075346
Artigo de periodico
Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells (2007)
Ortiz de Zevallos, Angela M; Cano, Nilo Francisco; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physical Review B. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ORTIZ DE ZEVALLOS, Angela M et al. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, v. 75, n. 20, p. 205324/1-205324/8, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal. Acesso em: 09 nov. 2024.
APA
Ortiz de Zevallos, A. M., Cano, N. F., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2007). Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, 75( 20), 205324/1-205324/8. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
NLM
Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2024 nov. 09 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
Vancouver
Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2024 nov. 09 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
Artigo de periodico
Gain and recombination dynamics of quantum-dot infrared photodetectors (2006)
Lim, H; Movaghar, B; Tsao , S; Taguchi, M; Zhang, W; Quivy, A. A.; Razeghi, M
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
LIM, H et al. Gain and recombination dynamics of quantum-dot infrared photodetectors. Physical Review B, v. 74, n. 20, p. 205321/1-205321/8, 2006Tradução . . Disponível em: https://doi.org/10.1103/physrevb.74.205321. Acesso em: 09 nov. 2024.
APA
Lim, H., Movaghar, B., Tsao , S., Taguchi, M., Zhang, W., Quivy, A. A., & Razeghi, M. (2006). Gain and recombination dynamics of quantum-dot infrared photodetectors. Physical Review B, 74( 20), 205321/1-205321/8. doi:10.1103/physrevb.74.205321
NLM
Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Gain and recombination dynamics of quantum-dot infrared photodetectors [Internet]. Physical Review B. 2006 ; 74( 20): 205321/1-205321/8.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.74.205321
Vancouver
Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Gain and recombination dynamics of quantum-dot infrared photodetectors [Internet]. Physical Review B. 2006 ; 74( 20): 205321/1-205321/8.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.74.205321
Artigo de periodico
Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates (2005)
Martini, S; Quivy, A. A.; Lamas, T E; Silva, E C F da
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS, ESTRUTURA ELETRÔNICA
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ABNT
MARTINI, S et al. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, v. 72, n. 15, p. 153304/01-153304/04, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.72.153304. Acesso em: 09 nov. 2024.
APA
Martini, S., Quivy, A. A., Lamas, T. E., & Silva, E. C. F. da. (2005). Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, 72( 15), 153304/01-153304/04. doi:10.1103/physrevb.72.153304
NLM
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Vancouver
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Artigo de periodico
Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas (2005)
Gusev, Guennadii Michailovich; Duarte, C A; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Bakarov, A K; Toropov, A I
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, EFEITO HALL
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ABNT
GUSEV, Guennadii Michailovich et al. Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas. Physical Review B, v. 71, n. 16, p. 165311/1-165311/8, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.71.165311. Acesso em: 09 nov. 2024.
APA
Gusev, G. M., Duarte, C. A., Quivy, A. A., Lamas, T. E., Leite, J. R., Bakarov, A. K., & Toropov, A. I. (2005). Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas. Physical Review B, 71( 16), 165311/1-165311/8. doi:10.1103/physrevb.71.165311
NLM
Gusev GM, Duarte CA, Quivy AA, Lamas TE, Leite JR, Bakarov AK, Toropov AI. Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas [Internet]. Physical Review B. 2005 ; 71( 16): 165311/1-165311/8.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.71.165311
Vancouver
Gusev GM, Duarte CA, Quivy AA, Lamas TE, Leite JR, Bakarov AK, Toropov AI. Spin-dependent Hall effect in a parabolic well with a quasi-three-dimensional electron gas [Internet]. Physical Review B. 2005 ; 71( 16): 165311/1-165311/8.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.71.165311
Artigo de periodico
Surface-induced orientational phas transition in a lyotropic liquid crystal observed by nonlinear optical techniques (2004)
Bechtold, Ivan Helmuth; Gómez, S L; Bonvent, Jean-Jacques; Oliveira, Elisabeth Andreoli de; Hohlfeld, J; Rasing, The
Source: Physical Review B. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, CRISTAIS LÍQUIDOS, FÍSICA DE PLASMAS
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ABNT
BECHTOLD, Ivan Helmuth et al. Surface-induced orientational phas transition in a lyotropic liquid crystal observed by nonlinear optical techniques. Physical Review B, 2004Tradução . . Disponível em: https://doi.org/10.1103/physreve.69.061707. Acesso em: 09 nov. 2024.
APA
Bechtold, I. H., Gómez, S. L., Bonvent, J. -J., Oliveira, E. A. de, Hohlfeld, J., & Rasing, T. (2004). Surface-induced orientational phas transition in a lyotropic liquid crystal observed by nonlinear optical techniques. Physical Review B. doi:10.1103/physreve.69.061707
NLM
Bechtold IH, Gómez SL, Bonvent J-J, Oliveira EA de, Hohlfeld J, Rasing T. Surface-induced orientational phas transition in a lyotropic liquid crystal observed by nonlinear optical techniques [Internet]. Physical Review B. 2004 ;[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physreve.69.061707
Vancouver
Bechtold IH, Gómez SL, Bonvent J-J, Oliveira EA de, Hohlfeld J, Rasing T. Surface-induced orientational phas transition in a lyotropic liquid crystal observed by nonlinear optical techniques [Internet]. Physical Review B. 2004 ;[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physreve.69.061707
Artigo de periodico
Quantum Hall ferromagnet in a parabolic well (2003)
Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Estibals, O; Portal, J C
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA, ESTRUTURA ELETRÔNICA
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ABNT
GUSEV, Guennadii Michailovich et al. Quantum Hall ferromagnet in a parabolic well. Physical Review B, v. 67, n. 155313/1-155313/8, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.67.155313. Acesso em: 09 nov. 2024.
APA
Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2003). Quantum Hall ferromagnet in a parabolic well. Physical Review B, 67( 155313/1-155313/8). doi:10.1103/physrevb.67.155313
NLM
Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Quantum Hall ferromagnet in a parabolic well [Internet]. Physical Review B. 2003 ; 67( 155313/1-155313/8):[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.67.155313
Vancouver
Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Quantum Hall ferromagnet in a parabolic well [Internet]. Physical Review B. 2003 ; 67( 155313/1-155313/8):[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.67.155313
Artigo de periodico
Mechanism of dopant segregation to 'SiO IND.2'/Si(001) interfaces (2002)
Dabrowski, J.; Müssig, H. -J.; Zavodinsky, V.; Baierle, Rogerio Jose; Caldas, Marília Junqueira
Source: Physical Review B. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, FILMES FINOS
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ABNT
DABROWSKI, J. et al. Mechanism of dopant segregation to 'SiO IND.2'/Si(001) interfaces. Physical Review B, v. 65, n. 24, p. 245305/1-245305/11, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000024245305000001&idtype=cvips. Acesso em: 09 nov. 2024.
APA
Dabrowski, J., Müssig, H. -J., Zavodinsky, V., Baierle, R. J., & Caldas, M. J. (2002). Mechanism of dopant segregation to 'SiO IND.2'/Si(001) interfaces. Physical Review B, 65( 24), 245305/1-245305/11. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000024245305000001&idtype=cvips
NLM
Dabrowski J, Müssig H-J, Zavodinsky V, Baierle RJ, Caldas MJ. Mechanism of dopant segregation to 'SiO IND.2'/Si(001) interfaces [Internet]. Physical Review B. 2002 ; 65( 24): 245305/1-245305/11.[citado 2024 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000024245305000001&idtype=cvips
Vancouver
Dabrowski J, Müssig H-J, Zavodinsky V, Baierle RJ, Caldas MJ. Mechanism of dopant segregation to 'SiO IND.2'/Si(001) interfaces [Internet]. Physical Review B. 2002 ; 65( 24): 245305/1-245305/11.[citado 2024 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000024245305000001&idtype=cvips
Artigo de periodico
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well (2002)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Takahashi, E K; Quivy, A. A.; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Subjects: EFEITO MOSSBAUER, FOTOLUMINESCÊNCIA
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CAVALHEIRO, A et al. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, v. 65, n. 7, p. 75320/1-75320/7, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips. Acesso em: 09 nov. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Takahashi, E. K., Quivy, A. A., Leite, J. R., & Meneses, E. A. (2002). Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, 65( 7), 75320/1-75320/7. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
NLM
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Vancouver
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Artigo de periodico
Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level (2002)
Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Bakarov, A K; Toropov, A I; Estibals, O; Portal, J C
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, FENÔMENO DE TRANSPORTE, ESTRUTURA ELETRÔNICA
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ABNT
GUSEV, Guennadii Michailovich et al. Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level. Physical Review B, v. 65, n. 20, p. 205316/1-205316/9, 2002Tradução . . Disponível em: https://doi.org/10.1103/physrevb.65.205316. Acesso em: 09 nov. 2024.
APA
Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Bakarov, A. K., Toropov, A. I., et al. (2002). Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level. Physical Review B, 65( 20), 205316/1-205316/9. doi:10.1103/physrevb.65.205316
NLM
Gusev GM, Quivy AA, Lamas TE, Leite JR, Bakarov AK, Toropov AI, Estibals O, Portal JC. Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level [Internet]. Physical Review B. 2002 ; 65( 20): 205316/1-205316/9.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.65.205316
Vancouver
Gusev GM, Quivy AA, Lamas TE, Leite JR, Bakarov AK, Toropov AI, Estibals O, Portal JC. Magnetotransport of a quasi-three-dimensional electron gas in the lowest Landau level [Internet]. Physical Review B. 2002 ; 65( 20): 205316/1-205316/9.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.65.205316
Artigo de periodico
Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers (2000)
Frizzarini, M; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; cavalheiro, A; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
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ABNT
FRIZZARINI, M et al. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, v. 61, n. 20, p. 13923-13928, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips. Acesso em: 09 nov. 2024.
APA
Frizzarini, M., Silva, E. C. F. da, Quivy, A. A., cavalheiro, A., Leite, J. R., & Meneses, E. A. (2000). Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, 61( 20), 13923-13928. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
NLM
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Vancouver
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Artigo de periodico
Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers (1999)
Levine, A.; Silva, Euzi Conceicao Fernandes da; Sipahi, Guilherme Matos ; Quivy, A. A.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Dias, I. F. L.; Lauretto, E.; Oliveira, J. B. B.; Meneses, E. A.; Oliveira, A. G.
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEVINE, A. et al. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, v. 59, n. 7, p. 4634-4637, 1999Tradução . . Disponível em: https://doi.org/10.1103/physrevb.59.4634. Acesso em: 09 nov. 2024.
APA
Levine, A., Silva, E. C. F. da, Sipahi, G. M., Quivy, A. A., Scolfaro, L. M. R., Leite, J. R., et al. (1999). Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, 59( 7), 4634-4637. doi:10.1103/physrevb.59.4634
NLM
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.59.4634
Vancouver
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physrevb.59.4634
Artigo de periodico
Effect of a finite number of particles in the Bose-Einstein condensation of a trapped gas (1997)
Napolitano, Reginaldo de Jesus ; De Luca, J; Bagnato, Vanderlei Salvador ; Marques, Gil da Costa
Source: Physical Review B. Unidades: IF, IFSC
Assunto: FÍSICA MODERNA
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ABNT
NAPOLITANO, Reginaldo de Jesus et al. Effect of a finite number of particles in the Bose-Einstein condensation of a trapped gas. Physical Review B, v. 55, n. 5 , p. 3954-3956, 1997Tradução . . Disponível em: https://doi.org/10.1103/physreva.55.3954. Acesso em: 09 nov. 2024.
APA
Napolitano, R. de J., De Luca, J., Bagnato, V. S., & Marques, G. da C. (1997). Effect of a finite number of particles in the Bose-Einstein condensation of a trapped gas. Physical Review B, 55( 5 ), 3954-3956. doi:10.1103/physreva.55.3954
NLM
Napolitano R de J, De Luca J, Bagnato VS, Marques G da C. Effect of a finite number of particles in the Bose-Einstein condensation of a trapped gas [Internet]. Physical Review B. 1997 ; 55( 5 ): 3954-3956.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physreva.55.3954
Vancouver
Napolitano R de J, De Luca J, Bagnato VS, Marques G da C. Effect of a finite number of particles in the Bose-Einstein condensation of a trapped gas [Internet]. Physical Review B. 1997 ; 55( 5 ): 3954-3956.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/physreva.55.3954
Artigo de periodico
Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices (1996)
Pusep, Yuri A ; Silva, M T O; Galzerani, J C; Silva, S W; Scolfaro, L M R; Enderlein, R; Quivy, A. A.; Lima, A. P.; Leite, J. R.
Source: Physical Review B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices. Physical Review B, v. 54, n. 19, p. 13927-31, 1996Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/94574a2b-c2e8-49f9-9e2a-35dc2e9dcd9d/PhysRevB.54.13927.pdf. Acesso em: 09 nov. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Silva, S. W., Scolfaro, L. M. R., Enderlein, R., et al. (1996). Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices. Physical Review B, 54( 19), 13927-31. Recuperado de https://repositorio.usp.br/directbitstream/94574a2b-c2e8-49f9-9e2a-35dc2e9dcd9d/PhysRevB.54.13927.pdf
NLM
Pusep YA, Silva MTO, Galzerani JC, Silva SW, Scolfaro LMR, Enderlein R, Quivy AA, Lima AP, Leite JR. Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices [Internet]. Physical Review B. 1996 ;54( 19): 13927-31.[citado 2024 nov. 09 ] Available from: https://repositorio.usp.br/directbitstream/94574a2b-c2e8-49f9-9e2a-35dc2e9dcd9d/PhysRevB.54.13927.pdf
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Silva SW, Scolfaro LMR, Enderlein R, Quivy AA, Lima AP, Leite JR. Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices [Internet]. Physical Review B. 1996 ;54( 19): 13927-31.[citado 2024 nov. 09 ] Available from: https://repositorio.usp.br/directbitstream/94574a2b-c2e8-49f9-9e2a-35dc2e9dcd9d/PhysRevB.54.13927.pdf
Artigo de periodico
Magnetic breakdown in periodically 'SI'-doped 'GA''AS' (1994)
Henriques, André Bohomoletz; Morgoon, V N; Souza, P. L.; Bindilatti, V.; Oliveira Jr., N. F.; Shibli, S M
Source: Physical Review B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Magnetic breakdown in periodically 'SI'-doped 'GA''AS'. Physical Review B, v. 49, n. 16, p. 11248, 1994Tradução . . Acesso em: 09 nov. 2024.
APA
Henriques, A. B., Morgoon, V. N., Souza, P. L., Bindilatti, V., Oliveira Jr., N. F., & Shibli, S. M. (1994). Magnetic breakdown in periodically 'SI'-doped 'GA''AS'. Physical Review B, 49( 16), 11248.
NLM
Henriques AB, Morgoon VN, Souza PL, Bindilatti V, Oliveira Jr. NF, Shibli SM. Magnetic breakdown in periodically 'SI'-doped 'GA''AS'. Physical Review B. 1994 ;49( 16): 11248.[citado 2024 nov. 09 ]
Vancouver
Henriques AB, Morgoon VN, Souza PL, Bindilatti V, Oliveira Jr. NF, Shibli SM. Magnetic breakdown in periodically 'SI'-doped 'GA''AS'. Physical Review B. 1994 ;49( 16): 11248.[citado 2024 nov. 09 ]

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