Multiple phase silicon in submicrometer chips removed by diamond turning (2005)
Source: Journal of the Brazilian Society of Mechanical Sciences and Engineering. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
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JASINEVICIUS, Renato Goulart et al. Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, v. 27, n. 4, p. 440-448, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782005000400013. Acesso em: 04 nov. 2024.APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., Pizani, P. S., Lanciotti Junior, F., & Santos, F. J. dos. (2005). Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, 27( 4), 440-448. doi:10.1590/s1678-58782005000400013NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1590/s1678-58782005000400013Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
