Petitprez, Emmanuel; Moshegov, N.; Marega Junior, Euclydes 
; Basmaji, Pierre; Mazel, A.; Fourmeaux, R.; Dorignac, D.
Source: Book of Abstracts. Conference titles: International Conference on Supperlattices, Microructures, and Microdevices. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PETITPREZ, Emmanuel et al. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1998, Anais.. Hurghada: Instituto de Física de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 16 nov. 2024.APA
Petitprez, E., Moshegov, N., Marega Junior, E., Basmaji, P., Mazel, A., Fourmeaux, R., & Dorignac, D. (1998). Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. In Book of Abstracts. Hurghada: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Petitprez E, Moshegov N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignac D. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. Book of Abstracts. 1998 ;[citado 2024 nov. 16 ]Vancouver
Petitprez E, Moshegov N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignac D. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. Book of Abstracts. 1998 ;[citado 2024 nov. 16 ]
