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Trabalho de evento-resumo
Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells (2011)
Morais, R R O; Dias, I F L; Duarte, J L; Laureto, E; Silva, M A T da; Lourenço, S A; Silva, E C F da; Quivy, A A; Cezar, D F
Source: Resumo. Conference titles: Econtro de Física. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
MORAIS, R R O et al. Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf. Acesso em: 27 jun. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Duarte, J. L., Laureto, E., Silva, M. A. T. da, Lourenço, S. A., et al. (2011). Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf
NLM
Morais RRO, Dias IFL, Duarte JL, Laureto E, Silva MAT da, Lourenço SA, Silva ECF da, Quivy AA, Cezar DF. Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells [Internet]. Resumo. 2011 ;[citado 2024 jun. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf
Vancouver
Morais RRO, Dias IFL, Duarte JL, Laureto E, Silva MAT da, Lourenço SA, Silva ECF da, Quivy AA, Cezar DF. Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells [Internet]. Resumo. 2011 ;[citado 2024 jun. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf
Trabalho de evento-resumo
Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100) (2010)
Lourenço, Sidney Alves; Poças, Luiz Carlos; Lopes, Joyce Marquini; Laureto, Edson; Duarte, José Leonil; Dias, Ivan Frederico Lupiano; Quivy, A. A.
Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
LOURENÇO, Sidney Alves et al. Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100). 2010, Anais.. São Paulo: SBF, 2010. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R0686-1.pdf. Acesso em: 27 jun. 2024.
APA
Lourenço, S. A., Poças, L. C., Lopes, J. M., Laureto, E., Duarte, J. L., Dias, I. F. L., & Quivy, A. A. (2010). Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100). In . São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R0686-1.pdf
NLM
Lourenço SA, Poças LC, Lopes JM, Laureto E, Duarte JL, Dias IFL, Quivy AA. Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100) [Internet]. 2010 ;[citado 2024 jun. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R0686-1.pdf
Vancouver
Lourenço SA, Poças LC, Lopes JM, Laureto E, Duarte JL, Dias IFL, Quivy AA. Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100) [Internet]. 2010 ;[citado 2024 jun. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R0686-1.pdf
Artigo de periodico
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs (2010)
Morais, R R O; Dias, I F L; Duarte, J L; Laureto, E; Lourenço, S A; Silva, Euzi Conceição Fernandes da; Quivy, A. A.
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
MORAIS, R R O et al. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, v. 40, n. 1, p. 15-21, 2010Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332010000100003. Acesso em: 27 jun. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Duarte, J. L., Laureto, E., Lourenço, S. A., Silva, E. C. F. da, & Quivy, A. A. (2010). Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, 40( 1), 15-21. doi:10.1590/s0103-97332010000100003
NLM
Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2024 jun. 27 ] Available from: https://doi.org/10.1590/s0103-97332010000100003
Vancouver
Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2024 jun. 27 ] Available from: https://doi.org/10.1590/s0103-97332010000100003
Artigo de periodico
Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells (2009)
Morais, R R O; Dias, I F L; Silva, M A T da; Cesar, D F; Duarte, J L; Lourenço, S A; Laureto, E; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.
Source: Journal of Physics-Condensed Matter. Unidade: IF
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
MORAIS, R R O et al. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, v. 21, n. 15, p. 155601/1-155601/7, 2009Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf. Acesso em: 27 jun. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Silva, M. A. T. da, Cesar, D. F., Duarte, J. L., Lourenço, S. A., et al. (2009). Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, 21( 15), 155601/1-155601/7. Recuperado de https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf
NLM
Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2024 jun. 27 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf
Vancouver
Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2024 jun. 27 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf
Artigo de periodico
H-band emission in single heterojunctions (2003)
Qu, Fanyao; Lino, Antônio Tadeu; Dantas, N O; Morais, P C; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
QU, Fanyao et al. H-band emission in single heterojunctions. Microelectronics Journal, v. 34, n. 5-8, p. 755-757, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00119-8. Acesso em: 27 jun. 2024.
APA
Qu, F., Lino, A. T., Dantas, N. O., Morais, P. C., Silva, E. C. F. da, Quivy, A. A., & Leite, J. R. (2003). H-band emission in single heterojunctions. Microelectronics Journal, 34( 5-8), 755-757. doi:10.1016/s0026-2692(03)00119-8
NLM
Qu F, Lino AT, Dantas NO, Morais PC, Silva ECF da, Quivy AA, Leite JR. H-band emission in single heterojunctions [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 755-757.[citado 2024 jun. 27 ] Available from: https://doi.org/10.1016/s0026-2692(03)00119-8
Vancouver
Qu F, Lino AT, Dantas NO, Morais PC, Silva ECF da, Quivy AA, Leite JR. H-band emission in single heterojunctions [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 755-757.[citado 2024 jun. 27 ] Available from: https://doi.org/10.1016/s0026-2692(03)00119-8
Artigo de periodico
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells (2003)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Takahashi, E K; Martini, S; Silva, M J da; Meneses, E A; Leite, J. R.
Source: Journal of Physics: Condensed Matter. Unidade: IF
Assunto: SUPERCONDUTIVIDADE
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ABNT
CAVALHEIRO, A et al. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, v. 15, n. 2, p. 121-132, 2003Tradução . . Disponível em: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf. Acesso em: 27 jun. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Quivy, A. A., Takahashi, E. K., Martini, S., Silva, M. J. da, et al. (2003). Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, 15( 2), 121-132. Recuperado de http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
NLM
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 jun. 27 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Vancouver
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 jun. 27 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Artigo de periodico
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well (2002)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Takahashi, E K; Quivy, A. A.; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Subjects: EFEITO MOSSBAUER, FOTOLUMINESCÊNCIA
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ABNT
CAVALHEIRO, A et al. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, v. 65, n. 7, p. 75320/1-75320/7, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips. Acesso em: 27 jun. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Takahashi, E. K., Quivy, A. A., Leite, J. R., & Meneses, E. A. (2002). Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, 65( 7), 75320/1-75320/7. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
NLM
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 jun. 27 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Vancouver
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 jun. 27 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Trabalho de evento-resumo
The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well (2001)
Cavalheiro, Ademir; Takahashi, Eduardo Kojy; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Leite, J. R.; MENESES, Eliermes Arraes
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, SEMICONDUTIVIDADE, CONDUÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAVALHEIRO, Ademir et al. The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 27 jun. 2024.
APA
Cavalheiro, A., Takahashi, E. K., Silva, E. C. F. da, Quivy, A. A., Leite, J. R., & MENESES, E. A. (2001). The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well. In Resumos. São Paulo: SBF.
NLM
Cavalheiro A, Takahashi EK, Silva ECF da, Quivy AA, Leite JR, MENESES EA. The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well. Resumos. 2001 ;[citado 2024 jun. 27 ]
Vancouver
Cavalheiro A, Takahashi EK, Silva ECF da, Quivy AA, Leite JR, MENESES EA. The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well. Resumos. 2001 ;[citado 2024 jun. 27 ]

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