Source: Abstracts. Conference titles: International Conference on Metalorganic Vapor Phase Epitaxy. Unidade: IFQSC
Assunto: MATÉRIA CONDENSADA
ABNT
BERNUSSI, A. A. et al. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. 1990, Anais.. Aachen: , Universidade de São Paulo, 1990. . Acesso em: 15 nov. 2024.APA
Bernussi, A. A., Iikawa, F., Motisuke, P., & Basmaji, P. (1990). Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. In Abstracts. Aachen: , Universidade de São Paulo.NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. Abstracts. 1990 ;[citado 2024 nov. 15 ]Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. Abstracts. 1990 ;[citado 2024 nov. 15 ]