Source: IEEE Journal of Selected Topics in Quantum Electronics. Unidade: EESC
Subjects: DISPOSITIVOS ÓPTICOS, FOTÔNICA, SILÍCIO, CIRCUITOS INTEGRADOS, ENGENHARIA ELÉTRICA
ABNT
DOURADO, Diego Marques et al. Capacitive silicon modulator design with V-Shaped SiO_{2} gate waveguide to optimize V_{\pi }\times L and bandwidth trade-off. IEEE Journal of Selected Topics in Quantum Electronics, v. 26, n. 2, p. 1-8, 2020Tradução . . Disponível em: https://doi.org/10.1109/JSTQE.2019.2949464. Acesso em: 07 nov. 2024.APA
Dourado, D. M., Farias, G. B. de, Bustamante, Y. R., Rocha, M. de L., & Carmo, J. P. P. do. (2020). Capacitive silicon modulator design with V-Shaped SiO_{2} gate waveguide to optimize V_{\pi }\times L and bandwidth trade-off. IEEE Journal of Selected Topics in Quantum Electronics, 26( 2), 1-8. doi:10.1109/JSTQE.2019.2949464NLM
Dourado DM, Farias GB de, Bustamante YR, Rocha M de L, Carmo JPP do. Capacitive silicon modulator design with V-Shaped SiO_{2} gate waveguide to optimize V_{\pi }\times L and bandwidth trade-off [Internet]. IEEE Journal of Selected Topics in Quantum Electronics. 2020 ; 26( 2): 1-8.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1109/JSTQE.2019.2949464Vancouver
Dourado DM, Farias GB de, Bustamante YR, Rocha M de L, Carmo JPP do. Capacitive silicon modulator design with V-Shaped SiO_{2} gate waveguide to optimize V_{\pi }\times L and bandwidth trade-off [Internet]. IEEE Journal of Selected Topics in Quantum Electronics. 2020 ; 26( 2): 1-8.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1109/JSTQE.2019.2949464