Source: Programme and abstracts. Conference titles: International Conference on Defects in Insulating Materials. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
ABNT
SCALVI, Luís Vicente de Andrade et al. Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. 2000, Anais.. Johannesburg: Instituto de Física de São Carlos, Universidade de São Paulo, 2000. . Acesso em: 12 set. 2024.APA
Scalvi, L. V. de A., Messias, F. R., Vega, B. A. V., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (2000). Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. In Programme and abstracts. Johannesburg: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Scalvi LV de A, Messias FR, Vega BAV, Siu Li M, Santilli CV, Pulcinelli SH. Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Programme and abstracts. 2000 ;[citado 2024 set. 12 ]Vancouver
Scalvi LV de A, Messias FR, Vega BAV, Siu Li M, Santilli CV, Pulcinelli SH. Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Programme and abstracts. 2000 ;[citado 2024 set. 12 ]