Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films (2000)
- Authors:
- Autor USP: LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Publisher place: Johannesburg
- Date published: 2000
- Source:
- Título: Programme and abstracts
- Conference titles: International Conference on Defects in Insulating Materials
-
ABNT
SCALVI, Luís Vicente de Andrade et al. Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. 2000, Anais.. Johannesburg: Instituto de Física de São Carlos, Universidade de São Paulo, 2000. . Acesso em: 31 dez. 2025. -
APA
Scalvi, L. V. de A., Messias, F. R., Vega, B. A. V., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (2000). Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. In Programme and abstracts. Johannesburg: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Scalvi LV de A, Messias FR, Vega BAV, Siu Li M, Santilli CV, Pulcinelli SH. Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Programme and abstracts. 2000 ;[citado 2025 dez. 31 ] -
Vancouver
Scalvi LV de A, Messias FR, Vega BAV, Siu Li M, Santilli CV, Pulcinelli SH. Contributions of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Programme and abstracts. 2000 ;[citado 2025 dez. 31 ] - Synthesis, characterization and photocatalytic evaluation of lamellar perovskites KM2Nb3O10 (M = Ca and Sr) in discoloration of azo dyes
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