Miniband effects in short‐period InGaAs/InP superlattices (2007)
Fonte: AIP Conference Proceedings. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: SEMICONDUTORES, EFEITO RAMAN, DIFRAÇÃO POR RAIOS X, MAGNETISMO, POLARIZAÇÃO
ABNT
PUSEP, Yuri A et al. Miniband effects in short‐period InGaAs/InP superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.2729927. Acesso em: 07 out. 2024. , 2007APA
Pusep, Y. A., Rodrigues, A. G., Galzerani, J. C., Cornet, D. M., Comedi, D., & LaPierre, R. R. (2007). Miniband effects in short‐period InGaAs/InP superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.2729927NLM
Pusep YA, Rodrigues AG, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effects in short‐period InGaAs/InP superlattices [Internet]. AIP Conference Proceedings. 2007 ; 893( 1): 385-386.[citado 2024 out. 07 ] Available from: https://doi.org/10.1063/1.2729927Vancouver
Pusep YA, Rodrigues AG, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effects in short‐period InGaAs/InP superlattices [Internet]. AIP Conference Proceedings. 2007 ; 893( 1): 385-386.[citado 2024 out. 07 ] Available from: https://doi.org/10.1063/1.2729927