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Filtros : "Indexado no ISI - Institute for Scientific Information" "Universidade Federal de Uberlândia (UFU)" "Miwa, R H" Removidos: " IFSC028" "IQ" Limpar

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1 - 9 (9 records)

  • Artigo de periodico

    Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations (2005)

    Schmidt, T M; Miwa, R H; Venezuela, P; Fazzio, Adalberto

    Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA

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    • ABNT

      SCHMIDT, T M et al. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, v. 72, n. 19, p. 193404/1-193404/4, 2005Tradução . . Acesso em: 02 nov. 2024.

    • APA

      Schmidt, T. M., Miwa, R. H., Venezuela, P., & Fazzio, A. (2005). Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, 72( 19), 193404/1-193404/4.

    • NLM

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2024 nov. 02 ]

    • Vancouver

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2024 nov. 02 ]

  • Artigo de periodico

    Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) (2005)

    Miwa, R H; Orellana, W; Fazzio, Adalberto

    Source: Applied Physics Letters. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA

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      MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, v. 86, p. 213111, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1931027. Acesso em: 02 nov. 2024.

    • APA

      Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, 86, 213111. doi:10.1063/1.1931027

    • NLM

      Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1931027

    • Vancouver

      Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1931027

  • Artigo de periodico

    Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces (2005)

    Miwa, R H; Orellana, W; Fazzio, Adalberto

    Source: Applied Surface Science. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA

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      MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces. Applied Surface Science, v. 244, p. 124-128, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2004.09.165. Acesso em: 02 nov. 2024.

    • APA

      Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces. Applied Surface Science, 244, 124-128. doi:10.1016/j.apsusc.2004.09.165

    • NLM

      Miwa RH, Orellana W, Fazzio A. Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces [Internet]. Applied Surface Science. 2005 ; 244 124-128.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.apsusc.2004.09.165

    • Vancouver

      Miwa RH, Orellana W, Fazzio A. Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces [Internet]. Applied Surface Science. 2005 ; 244 124-128.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.apsusc.2004.09.165

  • Artigo de periodico

    Stability and electronic properties of carbon nanotubes adsorbed on Si(001) (2004)

    Orellana, W; Miwa, R H; Fazzio, Adalberto

    Source: Surface Science. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, ESTRUTURA ELETRÔNICA

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    • ABNT

      ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. Stability and electronic properties of carbon nanotubes adsorbed on Si(001). Surface Science, v. 566-568, p. 728-732, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.susc.2004.06.006. Acesso em: 02 nov. 2024.

    • APA

      Orellana, W., Miwa, R. H., & Fazzio, A. (2004). Stability and electronic properties of carbon nanotubes adsorbed on Si(001). Surface Science, 566-568, 728-732. doi:10.1016/j.susc.2004.06.006

    • NLM

      Orellana W, Miwa RH, Fazzio A. Stability and electronic properties of carbon nanotubes adsorbed on Si(001) [Internet]. Surface Science. 2004 ; 566-568 728-732.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.susc.2004.06.006

    • Vancouver

      Orellana W, Miwa RH, Fazzio A. Stability and electronic properties of carbon nanotubes adsorbed on Si(001) [Internet]. Surface Science. 2004 ; 566-568 728-732.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.susc.2004.06.006

  • Artigo de periodico

    Adsorption of 'Nh IND. 3' on Ge(001) (2003)

    Miotto, R; Miwa, R H; Ferraz, A. C.

    Source: Phisical Review B. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA

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      MIOTTO, R e MIWA, R H e FERRAZ, A. C. Adsorption of 'Nh IND. 3' on Ge(001). Phisical Review B, v. 68, n. 11, p. 115436/1-1155436/6, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips. Acesso em: 02 nov. 2024.

    • APA

      Miotto, R., Miwa, R. H., & Ferraz, A. C. (2003). Adsorption of 'Nh IND. 3' on Ge(001). Phisical Review B, 68( 11), 115436/1-1155436/6. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips

    • NLM

      Miotto R, Miwa RH, Ferraz AC. Adsorption of 'Nh IND. 3' on Ge(001) [Internet]. Phisical Review B. 2003 ; 68( 11): 115436/1-1155436/6.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips

    • Vancouver

      Miotto R, Miwa RH, Ferraz AC. Adsorption of 'Nh IND. 3' on Ge(001) [Internet]. Phisical Review B. 2003 ; 68( 11): 115436/1-1155436/6.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips

  • Artigo de periodico

    Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)

    Miwa, R H; Venezuela, P; Fazzio, Adalberto

    Source: Physical Review B. Unidade: IF

    Assunto: ESTRUTURA ELETRÔNICA

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      MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 02 nov. 2024.

    • APA

      Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips

    • NLM

      Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips

    • Vancouver

      Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips

  • Artigo de periodico

    First-principles calculations of carbon nanotubes adsorbed on Si(001) (2003)

    Orellana, W; Miwa, R H; Fazzio, Adalberto

    Source: Physical Review Letters. Unidade: IF

    Subjects: PROPRIEDADES DOS MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA

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    • ABNT

      ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, v. 91, n. 16, p. 166802/1-166802/4, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips. Acesso em: 02 nov. 2024.

    • APA

      Orellana, W., Miwa, R. H., & Fazzio, A. (2003). First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, 91( 16), 166802/1-166802/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

    • NLM

      Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

    • Vancouver

      Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

  • Artigo de periodico

    Ab initio calculations on the compensation mechanisms in InP (2001)

    Schmidt, T M; Miwa, R H; Fazzio, Adalberto; Mota, R.

    Source: Solid State Communications. Unidade: IF

    Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS)

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    • ABNT

      SCHMIDT, T M et al. Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, v. 117, n. 6, p. 353-355, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00487-7. Acesso em: 02 nov. 2024.

    • APA

      Schmidt, T. M., Miwa, R. H., Fazzio, A., & Mota, R. (2001). Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, 117( 6), 353-355. doi:10.1016/s0038-1098(00)00487-7

    • NLM

      Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7

    • Vancouver

      Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7

  • Artigo de periodico

    Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) (2001)

    Miotto, R.; Srivastava, G P; Miwa, R H; Ferraz, A. C.

    Source: Journal of Chemical Physics. Unidade: IF

    Subjects: MICROSCOPIA, FEIXES, ABSORÇÃO, SUPERFÍCIE FÍSICA

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    • ABNT

      MIOTTO, R. et al. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, v. 114, n. 21, p. 9549-9556, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips. Acesso em: 02 nov. 2024.

    • APA

      Miotto, R., Srivastava, G. P., Miwa, R. H., & Ferraz, A. C. (2001). Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, 114( 21), 9549-9556. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

    • NLM

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

    • Vancouver

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 nov. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips
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